View source for US Patent Application 17837453. INTEGRATED CIRCUIT DEVICES INCLUDING A PARAMETER MEASURING STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

=INTEGRATED CIRCUIT DEVICES INCLUDING A PARAMETER MEASURING STRUCTURE AND METHODS OF FORMING THE SAME=


==Inventors==

[[BYOUNGHAK Hong of Albany NY (US)]]


[[Wookhyun Kwon of Hwaseong-si (KR)]]


[[Hyoeun Park of Cohoes NY (US)]]


[[Kangill Seo of Albany NY (US)]]


==INTEGRATED CIRCUIT DEVICES INCLUDING A PARAMETER MEASURING STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract==


*This abstract for appeared for patent application  number 17837453 Titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A PARAMETER MEASURING STRUCTURE AND METHODS OF FORMING THE SAME'

==Simplified Explanation==

The abstract describes integrated circuit devices that consist of a cell transistor and a parameter measuring structure. The cell transistor is located on one side of a substrate, while the parameter measuring structure includes two contact structures that extend through the substrate to the other side. The second side of the substrate exposes the respective portions of the contact structures.


==Original Abstract Submitted==

Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.