View source for US Patent Application 17726968. MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE simplified abstract

=MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE=


==Organization Name==

[[Micron Technology, Inc.]]


==Inventor(s)==

[[Byeung Chul Kim of Boise ID (US)]]


[[Joshua Wolanyk of Boise ID (US)]]


[[Richard J. Hill of Boise ID (US)]]


[[Damir Fazil of Boise ID (US)]]


==MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 17726968 Titled 'MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE'

==Simplified Explanation==

The abstract describes various methods and apparatuses for forming electronic devices. These methods involve stacking layers of materials, creating openings in these layers, filling the openings with dielectric material, and then adding additional layers on top. The process also includes forming pillars, one for a memory cell string and another for a contact structure, which extend through the layers of materials and the openings.


==Original Abstract Submitted==

Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second openings; forming tiers of materials over the levels of materials and over the dielectric material in the first and second openings; forming a first pillar of a memory cell string, the first pillar extending through the tiers of materials and extending partially into a location of the first opening; and forming a second pillar of a contact structure, the second pillar extending through the tiers of materials and through a location of the second opening.