View source for Taiwan semiconductor manufacturing company, ltd. (20240105818). Fin Field-Effect Transistor Device and Method of Forming the Same simplified abstract

=Fin Field-Effect Transistor Device and Method of Forming the Same=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Jian-Jou Lian of Tainan (TW)|Jian-Jou Lian of Tainan (TW)]][[Category:Jian-Jou Lian of Tainan (TW)]]

[[:Category:Chun-Neng Lin of Hsinchu (TW)|Chun-Neng Lin of Hsinchu (TW)]][[Category:Chun-Neng Lin of Hsinchu (TW)]]

[[:Category:Ming-Hsi Yeh of Hsinchu (TW)|Ming-Hsi Yeh of Hsinchu (TW)]][[Category:Ming-Hsi Yeh of Hsinchu (TW)]]

[[:Category:Chieh-Wei Chen of Taoyuan (TW)|Chieh-Wei Chen of Taoyuan (TW)]][[Category:Chieh-Wei Chen of Taoyuan (TW)]]

[[:Category:Tzu-Ang Chiang of I-lan (TW)|Tzu-Ang Chiang of I-lan (TW)]][[Category:Tzu-Ang Chiang of I-lan (TW)]]

==Fin Field-Effect Transistor Device and Method of Forming the Same - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105818 titled 'Fin Field-Effect Transistor Device and Method of Forming the Same

==Simplified Explanation==

The semiconductor device described in the patent application includes a gate electrode positioned over a channel region of a semiconductor fin, with first spacers and second spacers also located over the semiconductor fin. The gate electrode is divided into a lower portion between the first spacers and an upper portion above the first spacers, while the second spacers are adjacent to the first spacers on the opposite side of the gate electrode. The upper portion of the gate electrode is situated between the second spacers.

* Gate electrode over semiconductor fin
* First spacers and second spacers over semiconductor fin
* Lower portion of gate electrode between first spacers
* Upper portion of gate electrode above first spacers
* Second spacers adjacent to first spacers opposite gate electrode
* Upper portion of gate electrode between second spacers

== Potential Applications ==
This technology could be applied in:
* Advanced semiconductor devices
* High-performance electronics
* Nanotechnology research

== Problems Solved ==
This technology helps to address:
* Enhanced control over semiconductor devices
* Improved efficiency in electronic devices
* Increased performance in nanoscale applications

== Benefits ==
The benefits of this technology include:
* Higher precision in device operation
* Greater reliability in electronic systems
* Enhanced functionality in miniaturized devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could include:
* Semiconductor manufacturing industry
* Electronics and consumer technology sector
* Research and development organizations

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to semiconductor device structures

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor device structures on the market? ===
This article does not provide a direct comparison with existing semiconductor device structures, leaving the reader to wonder about the specific advantages and differences between this technology and current solutions.

=== What are the specific manufacturing processes involved in creating this semiconductor device? ===
The article does not delve into the detailed manufacturing processes required to produce this semiconductor device, leaving a gap in understanding for readers interested in the practical implementation of the technology.


==Original Abstract Submitted==

a semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. a lower portion of the gate electrode is between the first spacers. an upper portion of the gate electrode is above the first spacers. the second spacers are adjacent the first spacers opposite the gate electrode. the upper portion of the gate electrode is between the second spacers.



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[[Category:H01L21/84]]
[[Category:H01L29/78]]