View source for Taiwan semiconductor manufacturing co., ltd. (20240098960). COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME simplified abstract

=COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:YU-KUAN Lin of Hsinchu (TW)|YU-KUAN Lin of Hsinchu (TW)]][[Category:YU-KUAN Lin of Hsinchu (TW)]]

[[:Category:CHANG-TA Yang of Hsinchu (TW)|CHANG-TA Yang of Hsinchu (TW)]][[Category:CHANG-TA Yang of Hsinchu (TW)]]

[[:Category:PING-WEI Wang of Hsinchu (TW)|PING-WEI Wang of Hsinchu (TW)]][[Category:PING-WEI Wang of Hsinchu (TW)]]

[[:Category:KUO-YI Chao of Hsinchu (TW)|KUO-YI Chao of Hsinchu (TW)]][[Category:KUO-YI Chao of Hsinchu (TW)]]

[[:Category:MEI-YUN Wang of Hsinchu (TW)|MEI-YUN Wang of Hsinchu (TW)]][[Category:MEI-YUN Wang of Hsinchu (TW)]]

==COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240098960 titled 'COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME

==Simplified Explanation==

The integrated circuit structure described in the abstract involves a first transistor with a gate overlying a channel region, a source region, and a drain region. A conductive contact is connected to the drain region of the first transistor. A second transistor is adjacent to the first transistor, with its gate spaced from the gate of the first transistor. A conductive via passes through an insulation layer to connect to the gate of the second transistor. An expanded conductive via connects the drain of the first transistor to the gate of the second transistor.

* The structure includes two transistors with gates and channel regions.
* A conductive contact is connected to the drain region of the first transistor.
* A conductive via passes through an insulation layer to connect to the gate of the second transistor.
* An expanded conductive via connects the drain of the first transistor to the gate of the second transistor.

== Potential Applications ==
The technology described in the patent application could be applied in:
* Integrated circuits
* Semiconductor devices
* Electronics manufacturing

== Problems Solved ==
This technology helps in:
* Improving circuit performance
* Enhancing connectivity between transistors
* Reducing signal interference

== Benefits ==
The benefits of this technology include:
* Increased efficiency in circuit design
* Enhanced reliability of electronic devices
* Improved signal transmission

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Telecommunications
* Automotive electronics

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar integrated circuit structures in semiconductor devices from other manufacturers.

== Unanswered Questions ==

=== How does this technology impact power consumption in electronic devices? ===
The article does not provide information on the impact of this technology on power consumption in electronic devices.

=== Are there any limitations to the size or scale at which this technology can be implemented? ===
The article does not address any limitations regarding the size or scale of implementation for this technology.


==Original Abstract Submitted==

an integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. the first transistor includes a channel region, a source region and a drain region. a conductive contact is coupled to the drain region of the first transistor. a second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. the gate of the second transistor is spaced from the gate of the first transistor. a conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. an expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.



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