View source for Taiwan semiconductor manufacturing co., ltd. (20240095439). DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING simplified abstract

=DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Wei-Yi Hu of Hsinchu (TW)|Wei-Yi Hu of Hsinchu (TW)]][[Category:Wei-Yi Hu of Hsinchu (TW)]]

[[:Category:Chih-Ming Chao of Hsinchu (TW)|Chih-Ming Chao of Hsinchu (TW)]][[Category:Chih-Ming Chao of Hsinchu (TW)]]

[[:Category:Jung-Chou Tsai of Hsinchu (TW)|Jung-Chou Tsai of Hsinchu (TW)]][[Category:Jung-Chou Tsai of Hsinchu (TW)]]

==DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240095439 titled 'DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING

==Simplified Explanation==

The semiconductor device described in the patent application includes an interconnection pattern with parallel conductors, a first conductor aligned with a first axis, and a first dummy pattern aligned with a second axis on one side of the first axis. The first dummy pattern is offset from the first axis by a specific distance and includes multiple dummy conductors separated by a certain spacing.

* The patent application describes a semiconductor device with a unique interconnection pattern.
* The interconnection pattern includes parallel conductors, a first conductor, and a first dummy pattern.
* The first dummy pattern is offset from the first axis by a specific distance and includes multiple dummy conductors.
* The dummy conductors are separated by a specific spacing.

== Potential Applications ==
The technology described in this patent application could be applied in:
* Semiconductor manufacturing
* Integrated circuit design
* Electronic device production

== Problems Solved ==
This technology helps in:
* Improving the efficiency of interconnection patterns
* Enhancing the performance of semiconductor devices
* Reducing signal interference in electronic circuits

== Benefits ==
The benefits of this technology include:
* Higher reliability in semiconductor devices
* Increased speed and efficiency in electronic circuits
* Enhanced overall performance of electronic devices

== Potential Commercial Applications ==
Potential commercial applications of this technology could be in:
* Consumer electronics
* Telecommunications industry
* Automotive electronics

== Possible Prior Art ==
One possible prior art could be:
* Existing interconnection patterns in semiconductor devices
* Previous methods of reducing signal interference in electronic circuits

=== Unanswered Questions ===

=== How does this technology compare to existing interconnection patterns in terms of performance and efficiency? ===
This article does not provide a direct comparison between this technology and existing interconnection patterns. Further research or testing may be needed to determine the specific advantages of this innovation over current methods.

=== What are the specific manufacturing processes involved in implementing this interconnection pattern in semiconductor devices? ===
The article does not delve into the detailed manufacturing processes required to implement this interconnection pattern. Additional information or resources may be necessary to understand the practical aspects of integrating this technology into semiconductor production.


==Original Abstract Submitted==

disclosed are semiconductor devices having an interconnection pattern that includes a plurality of parallel conductors including a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis and offset from the first axis by an axis offset distance lin which the first dummy pattern includes n dummy conductors having a first dummy conductor length lwith the dummy conductors being separated by a dummy conductor-to-dummy conductor spacing ee.



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