View source for METHOD OF FORMING SEMICONDUCTOR DEVICE: abstract simplified (17714630)

*This abstract for appeared for patent application  number 17714630 Titled 'METHOD OF FORMING SEMICONDUCTOR DEVICE'

==Simplified Explanation==

This abstract describes a method for creating a semiconductor device. The process involves creating a structure with source/drain regions and a fin between them. A dummy gate is placed on the fin and surrounded by a spacer. The dummy gate is then removed to create a gate trench. A gate dielectric layer is formed on the walls of the trench, followed by a work function structure. A resist layer is applied to fill the trench, and then the top portion of the resist layer is removed. The exposed work function structure is then removed using a wet chemical etchant. The resist layer is then removed, and a conductive gate is formed in the trench.


==Original Abstract Submitted==

A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.