View source for METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM: abstract simplified (18326354)

*This abstract for appeared for patent application  number 18326354 Titled 'METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM'

==Simplified Explanation==

The abstract describes a method for performing a lithography process, which is a technique used in semiconductor manufacturing to create circuit patterns. The method involves applying a layer of photoresist material on a substrate. Droplets are then provided to a source vessel, and laser pulses are used to irradiate these droplets, generating plasma that emits extreme ultraviolet (EUV) radiation. The plasma is only generated when the temperature of the source vessel is within a specific threshold. The EUV radiation is directed onto the photoresist layer, creating a patterned layer. Finally, the patterned layer is developed and etched to form a circuit layout.


==Original Abstract Submitted==

A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.