View source for International business machines corporation (20240099163). Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material simplified abstract

=Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Luxherta Buzi of Chappaqua NY (US)|Luxherta Buzi of Chappaqua NY (US)]][[Category:Luxherta Buzi of Chappaqua NY (US)]]

[[:Category:Robert L. Bruce of White Plains NY (US)|Robert L. Bruce of White Plains NY (US)]][[Category:Robert L. Bruce of White Plains NY (US)]]

[[:Category:John M. Papalia of New York NY (US)|John M. Papalia of New York NY (US)]][[Category:John M. Papalia of New York NY (US)]]

[[:Category:Lynne Marie Gignac of Beacon NY (US)|Lynne Marie Gignac of Beacon NY (US)]][[Category:Lynne Marie Gignac of Beacon NY (US)]]

==Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240099163 titled 'Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material

==Simplified Explanation==

The patent application describes techniques for sidewall passivation and removal of redeposited materials and processing damage from phase change memory materials. 

* One or more phase change memory cells are provided, each including a phase change material between a bottom electrode and a top electrode.
* A carbon and oxygen-containing passivation layer is present on the sidewalls of the phase change material.
* An ovonic threshold switch may be included between the bottom and top electrodes, in series with the phase change material, with the carbon and oxygen-containing passivation layer also present on the sidewalls of the ovonic threshold switch.
* The method of fabricating the phase change memory devices is also provided.

== Potential Applications ==
The technology described in the patent application could be applied in the development of more efficient and reliable phase change memory devices for various electronic applications.

== Problems Solved ==
The innovation addresses issues related to sidewall passivation, removal of redeposited materials, and processing damage in phase change memory materials, improving the overall performance and longevity of the devices.

== Benefits ==
The benefits of this technology include enhanced stability, reduced processing damage, and improved functionality of phase change memory devices.

== Potential Commercial Applications ==
The technology has potential commercial applications in the semiconductor industry, particularly in the production of advanced memory devices for consumer electronics, data storage, and computing systems.

== Possible Prior Art ==
One possible prior art in this field could be the use of different passivation techniques in semiconductor devices to improve their performance and reliability.

=== Unanswered Questions ===

=== How does this technology compare to existing passivation methods in terms of effectiveness and cost-efficiency? ===
The patent application does not provide a direct comparison with existing passivation methods in terms of effectiveness and cost-efficiency. Further research or testing may be needed to evaluate these aspects.

=== What are the potential challenges in scaling up this technology for mass production in semiconductor manufacturing facilities? ===
The patent application does not address the potential challenges in scaling up this technology for mass production. Factors such as production costs, compatibility with existing manufacturing processes, and scalability issues may need to be considered.


==Original Abstract Submitted==

techniques for sidewall passivation and removal of redeposited materials and processing damage from phase change memory materials are provided. in one aspect, a phase change memory device includes: one or more phase change memory cells, where each of the phase change memory cells includes a phase change material between a bottom electrode and a top electrode; and a carbon and oxygen-containing passivation layer on sidewalls of the phase change material. an ovonic threshold switch can also be present between the bottom and top electrodes, in series with the phase change material, and the carbon and oxygen-containing passivation layer can also be present on sidewalls of the ovonic threshold switch. a method of fabricating the present phase change memory devices is also provided.



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