View source for Intel corporation (20240105804). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS simplified abstract

=INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Sean Pursel of Hillsboro OR (US)|Sean Pursel of Hillsboro OR (US)]][[Category:Sean Pursel of Hillsboro OR (US)]]

[[:Category:Dan S. Lavric of Beaverton OR (US)|Dan S. Lavric of Beaverton OR (US)]][[Category:Dan S. Lavric of Beaverton OR (US)]]

[[:Category:Allen B. Gardiner of Portland OR (US)|Allen B. Gardiner of Portland OR (US)]][[Category:Allen B. Gardiner of Portland OR (US)]]

[[:Category:Jonathan Hinke of Portland OR (US)|Jonathan Hinke of Portland OR (US)]][[Category:Jonathan Hinke of Portland OR (US)]]

[[:Category:Wonil Chung of Hillsboro OR (US)|Wonil Chung of Hillsboro OR (US)]][[Category:Wonil Chung of Hillsboro OR (US)]]

==INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105804 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS

==Simplified Explanation==

The patent application describes integrated circuit structures with fin isolation regions bound by gate cuts. In a specific example, the structure includes a vertical stack of horizontal nanowires over a first sub-fin, a gate structure over the nanowires and the first sub-fin, a dielectric structure laterally spaced apart from the gate structure but on a second sub-fin, and a gate cut between the gate structure and the dielectric structure.

* Vertical stack of horizontal nanowires over a first sub-fin
* Gate structure over the nanowires and the first sub-fin
* Dielectric structure laterally spaced apart from the gate structure on a second sub-fin
* Gate cut between the gate structure and the dielectric structure

### Potential Applications
This technology could be applied in advanced semiconductor manufacturing processes for high-performance integrated circuits.

### Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by providing better isolation and control over the flow of electrons.

### Benefits
The benefits of this technology include enhanced circuit performance, increased energy efficiency, and potentially smaller form factors for electronic devices.

### Potential Commercial Applications
This technology could find applications in the development of faster processors, memory devices, and other electronic components for various industries.

### Possible Prior Art
Prior art in this field may include similar techniques for fin isolation and gate cuts in integrated circuit structures.

#### Unanswered Questions

#### How does this technology compare to existing methods for fin isolation in integrated circuits?
This article does not provide a direct comparison with existing methods for fin isolation in integrated circuits.

#### What are the specific manufacturing challenges associated with implementing this technology on a large scale?
The article does not address the specific manufacturing challenges that may arise when implementing this technology on a large scale.


==Original Abstract Submitted==

integrated circuit structures having fin isolation regions bound by gate cuts are described. in an example, an integrated circuit structure includes a vertical stack of horizontal nanowires over a first sub-fin. a gate structure is over the vertical stack of horizontal nanowires and on the first sub-fin. a dielectric structure is laterally spaced apart from the gate structure. the dielectric structure is not over a channel structure but is on a second sub-fin. a gate cut is between the gate structure and the dielectric structure.



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