View source for 20240051818. SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED)

=SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED]]

==Inventor(s)==

[[:Category:Hsi-Cheng Hsu of Taichung City (TW)|Hsi-Cheng Hsu of Taichung City (TW)]][[Category:Hsi-Cheng Hsu of Taichung City (TW)]]

[[:Category:Chen-Wei Chiang of Hsinchu City (TW)|Chen-Wei Chiang of Hsinchu City (TW)]][[Category:Chen-Wei Chiang of Hsinchu City (TW)]]

[[:Category:Jui-Chun Weng of Taipei City (TW)|Jui-Chun Weng of Taipei City (TW)]][[Category:Jui-Chun Weng of Taipei City (TW)]]

[[:Category:Hsin-Yu Chen of Hsinchu City (TW)|Hsin-Yu Chen of Hsinchu City (TW)]][[Category:Hsin-Yu Chen of Hsinchu City (TW)]]

[[:Category:Chia Yu Lin of Taoyuan (TW)|Chia Yu Lin of Taoyuan (TW)]][[Category:Chia Yu Lin of Taoyuan (TW)]]

==SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240051818 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING

==Simplified Explanation==

The abstract describes a semiconductor device that includes a semiconductor layer, a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the MEMS structure and bonded to the bond ring. The MEMS structure has an upper surface, and the cap structure has a lower surface facing the upper surface of the MEMS structure. Dimples of eutectic material are present on the upper surface of the MEMS structure.

* The semiconductor device includes a semiconductor layer, MEMS structure, bond ring, and cap structure.
* The MEMS structure is defined within the semiconductor layer.
* The cap structure is positioned over the MEMS structure and bonded to the bond ring.
* Dimples of eutectic material are present on the upper surface of the MEMS structure.

Potential applications of this technology:

* MEMS devices: The semiconductor device can be used in various MEMS applications such as sensors, actuators, and switches.
* Semiconductor manufacturing: The technology can be utilized in the fabrication of semiconductor devices with MEMS structures.

Problems solved by this technology:

* Integration: The semiconductor device allows for the integration of MEMS structures within a semiconductor layer, enabling compact and efficient designs.
* Bonding: The bond ring and cap structure provide a reliable bonding mechanism for the MEMS structure, ensuring proper functionality.

Benefits of this technology:

* Miniaturization: The integration of MEMS structures within the semiconductor layer allows for smaller and more compact devices.
* Improved performance: The reliable bonding provided by the bond ring and cap structure ensures the proper functioning of the MEMS structure, leading to improved device performance.
* Manufacturing efficiency: The technology simplifies the manufacturing process by enabling the fabrication of MEMS devices within the semiconductor layer, reducing the need for additional assembly steps.


==Original Abstract Submitted==

in some embodiments, a semiconductor device is provided. the semiconductor device includes a semiconductor layer, a micro-electromechanical systems (mems) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the mems structure and bonded to the bond ring. the mems structure has an upper surface and the cap structure has a lower surface facing the upper surface of the mems structure. dimples of eutectic material are on the upper surface of the mems structure.



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