View source for 20240047388. CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION simplified abstract (Northrop Grumman Systems Corporation)

=CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION=


==Organization Name==

[[:Category:Northrop Grumman Systems Corporation|Northrop Grumman Systems Corporation]]


[[Category:Northrop Grumman Systems Corporation]]

==Inventor(s)==

[[:Category:Dah-Weih Duan of Redondo Beach CA (US)|Dah-Weih Duan of Redondo Beach CA (US)]][[Category:Dah-Weih Duan of Redondo Beach CA (US)]]

[[:Category:Elizabeth T. Kunkee of Redondo Beach CA (US)|Elizabeth T. Kunkee of Redondo Beach CA (US)]][[Category:Elizabeth T. Kunkee of Redondo Beach CA (US)]]

[[:Category:Stephane Larouche of Redondo Beach CA (US)|Stephane Larouche of Redondo Beach CA (US)]][[Category:Stephane Larouche of Redondo Beach CA (US)]]

==CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240047388 titled 'CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION

==Simplified Explanation==

The abstract describes a semiconductor technology for a high-frequency channelized filter. The technology includes a dielectric substrate with metal traces on one surface, an input and output port, and one metal trace carrying a high-frequency signal to be filtered. Other metal traces are connected to the one metal trace at intervals along its length, providing reactance to the high-frequency signal. Additional metal traces serve as a reference ground. A silicon enclosure is mounted to the substrate, with cavities and internal walls that surround the other metal traces. A layer of conductive metal covers the enclosure's surface, cavities, and internal walls.

* The technology is a high-frequency channelized filter implemented using semiconductor technology.
* It includes a dielectric substrate with metal traces on one surface, an input and output port, and a high-frequency signal-carrying metal trace.
* Other metal traces are connected to the signal-carrying trace at intervals, providing reactance to the signal.
* Additional metal traces serve as a reference ground.
* A silicon enclosure with cavities and internal walls surrounds the other metal traces.
* A layer of conductive metal covers the enclosure's surface, cavities, and internal walls.
* The metal areas on the enclosure engage corresponding areas of the additional traces on the substrate, providing electromagnetic field isolation.
* The cavities individually surround each of the other metal traces with conductive metal, further enhancing isolation.

Potential applications of this technology:
* High-frequency signal filtering in communication systems
* Signal processing in wireless devices
* RF circuitry in radar systems

Problems solved by this technology:
* Electromagnetic interference between metal traces is reduced, improving signal quality.
* Isolation between metal traces prevents cross-talk and signal degradation.

Benefits of this technology:
* Improved signal filtering and processing capabilities
* Enhanced signal quality and reliability
* Reduction in electromagnetic interference
* Increased performance and efficiency of communication systems.


==Original Abstract Submitted==

a semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. an input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. a silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. a layer of conductive metal covers the first planar surface, cavities and the internal walls. the silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. the cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.



[[Category:H01L23/66]]
[[Category:H01P1/203]]