View source for 20240047210. DOUBLE HARDMASKS FOR SELF-ALIGNED MULTI-PATTERNING PROCESSES simplified abstract (Tokyo Electron Limited)

=DOUBLE HARDMASKS FOR SELF-ALIGNED MULTI-PATTERNING PROCESSES=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Eric Chih-Fang Liu of Albany NY (US)|Eric Chih-Fang Liu of Albany NY (US)]][[Category:Eric Chih-Fang Liu of Albany NY (US)]]

[[:Category:Christopher Cole of Albany NY (US)|Christopher Cole of Albany NY (US)]][[Category:Christopher Cole of Albany NY (US)]]

[[:Category:Steven Grzeskowiak of Albany NY (US)|Steven Grzeskowiak of Albany NY (US)]][[Category:Steven Grzeskowiak of Albany NY (US)]]

[[:Category:Katie Lutker-lee of Albany NY (US)|Katie Lutker-lee of Albany NY (US)]][[Category:Katie Lutker-lee of Albany NY (US)]]

[[:Category:Xinghua Sun of Albany NY (US)|Xinghua Sun of Albany NY (US)]][[Category:Xinghua Sun of Albany NY (US)]]

[[:Category:Daniel Santos Rivera of Albany NY (US)|Daniel Santos Rivera of Albany NY (US)]][[Category:Daniel Santos Rivera of Albany NY (US)]]

==DOUBLE HARDMASKS FOR SELF-ALIGNED MULTI-PATTERNING PROCESSES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240047210 titled 'DOUBLE HARDMASKS FOR SELF-ALIGNED MULTI-PATTERNING PROCESSES

==Simplified Explanation==

The abstract describes a method of processing a substrate by forming recesses in a first mask layer over a mask stack, which includes a lower hardmask, a middle mask, and an upper hardmask. The recesses define an initial pattern with spacer structures having different heights on their sidewalls. The method involves etching the upper hardmask selectively to the middle mask to transfer the initial pattern, etching the middle mask selectively to the lower hardmask and the patterned upper hardmask to transfer the pattern, and etching the lower hardmask selectively to the patterned middle mask to transfer the pattern.

* The method involves forming recesses in a mask layer to create an initial pattern with spacer structures.
* The spacer structures have different heights on their sidewalls.
* The upper hardmask is selectively etched to transfer the initial pattern to it.
* The middle mask is selectively etched to transfer the pattern from the upper hardmask to it.
* The lower hardmask is selectively etched to transfer the pattern from the middle mask to it.

Potential applications of this technology:
* Semiconductor manufacturing: This method can be used in the fabrication of integrated circuits and other semiconductor devices.
* Nanotechnology: The method can be applied in the production of nanoscale structures and devices.
* Optoelectronics: The technology can be used in the manufacturing of optoelectronic devices such as LEDs and photovoltaic cells.

Problems solved by this technology:
* Precise pattern transfer: The method allows for the accurate transfer of patterns from one layer to another, enabling the creation of complex structures.
* Control of sidewall profiles: The different heights of the spacer structures' sidewalls provide control over the shape and dimensions of the transferred pattern.
* Selective etching: The selective etching process ensures that only specific layers are etched, preserving the integrity of the desired pattern.

Benefits of this technology:
* Improved device performance: The precise pattern transfer and control over sidewall profiles contribute to the production of high-performance devices with enhanced functionality.
* Cost-effective manufacturing: The method enables efficient fabrication processes, reducing production costs and increasing yield.
* Versatile applications: The technology can be applied in various industries, allowing for the production of a wide range of devices and structures.


==Original Abstract Submitted==

a method of processing a substrate that includes: forming recesses in a first mask layer over a mask stack including a lower hardmask, a middle mask, and an upper hardmask, the recesses defining an initial pattern including a plurality of spacer structures, each of the spacer structures having a first sidewall and an opposite second sidewall, the first sidewall having a different height from the second sidewall; etching the upper hardmask, selectively to the middle mask, to transfer the initial pattern to the upper hardmask; etching the middle mask, selectively to the lower hardmask and the patterned upper hardmask, to transfer a pattern of the patterned upper hardmask to the middle mask; and etching the lower hardmask, selectively to the patterned middle mask, to transfer a pattern of the patterned middle mask to the lower hardmask.



[[Category:H01L21/033]]
[[Category:H01L21/311]]