View source for 20240046133. EXCITONIC BOSE-EINSTEIN CONDENSATE (BEC) AS QUBITS USING SEMICONDUCTOR NANOSTRUCTURES FOR QUANTUM TECHNOLOGIES simplified abstract (INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH)

=EXCITONIC BOSE-EINSTEIN CONDENSATE (BEC) AS QUBITS USING SEMICONDUCTOR NANOSTRUCTURES FOR QUANTUM TECHNOLOGIES=


==Organization Name==

[[:Category:INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH|INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH]]


[[Category:INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH]]

==Inventor(s)==

[[:Category:Shouvik Datta of Pune (IN)|Shouvik Datta of Pune (IN)]][[Category:Shouvik Datta of Pune (IN)]]

[[:Category:Amit Bhunia of Pune (IN)|Amit Bhunia of Pune (IN)]][[Category:Amit Bhunia of Pune (IN)]]

[[:Category:Mohamed Henini of Pune (IN)|Mohamed Henini of Pune (IN)]][[Category:Mohamed Henini of Pune (IN)]]

[[:Category:Maryam Al Huwayz of Pune (IN)|Maryam Al Huwayz of Pune (IN)]][[Category:Maryam Al Huwayz of Pune (IN)]]

[[:Category:Mohit Kumar Singh of Pune (IN)|Mohit Kumar Singh of Pune (IN)]][[Category:Mohit Kumar Singh of Pune (IN)]]

==EXCITONIC BOSE-EINSTEIN CONDENSATE (BEC) AS QUBITS USING SEMICONDUCTOR NANOSTRUCTURES FOR QUANTUM TECHNOLOGIES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240046133 titled 'EXCITONIC BOSE-EINSTEIN CONDENSATE (BEC) AS QUBITS USING SEMICONDUCTOR NANOSTRUCTURES FOR QUANTUM TECHNOLOGIES

==Simplified Explanation==

The present disclosure describes a method and system for generating multiple long-lived qubits using excitonic becs, excitonic matter-waves, and excitonic superfluids in multi-dimensional hybrid nanostructures. This is achieved using semiconductor materials and device structures at temperatures ranging from 0-500K. The generated qubits can sustain quantum coherence for extended time scales of microseconds or milliseconds. The macroscopic quantum states of the qubits can be easily controlled using applied voltages (DC and/or AC), electrical power, and/or light beams. The integration of these qubits with semiconductor fabrication techniques allows for quicker and wider adoption of quantum technologies.

* Method and system for generating multiple long-lived qubits using excitonic becs, excitonic matter-waves, and excitonic superfluids
* Utilizes multi-dimensional hybrid nanostructures and semiconductor materials and device structures
* Operates at temperatures between 0-500K
* Qubits can sustain quantum coherence for extended time scales
* Macroscopic quantum states of the qubits can be easily controlled using applied voltages and/or light beams
* Integration with semiconductor fabrication techniques allows for quicker adoption of quantum technologies

== Potential Applications ==
* Quantum computing
* Quantum communication
* Quantum cryptography
* Quantum sensing
* Quantum simulation

== Problems Solved ==
* Limited coherence time of qubits
* Limited scalability of qubit generation
* Limited control over macroscopic quantum states
* Limited integration with semiconductor fabrication techniques

== Benefits ==
* Generation of multiple long-lived qubits
* Extended quantum coherence time scales
* Easily controllable macroscopic quantum states
* Integration with semiconductor fabrication techniques for wider adoption of quantum technologies


==Original Abstract Submitted==

the present disclosure provides method and system, which use multiple of excitonic bec(s) and/or excitonic matter-wave(s) and/or excitonic superfluid(s) as a platform to generate multiple (from a few to even millions or more) long-lived qubits in any conceivable multi-dimensional hybrid nano structure(s), mostly using semiconductor material(s) and/or device structure(s) at any temperature in between 0-500k, and that can sustain any quantum coherence for a much longer time scales of microseconds or milliseconds or even more, but not limited to these time scales for any conceivable faster device operation(s) as well. the macroscopic quantum states of the generated qubits are easily controllable with applied voltage(s) (dc and/or ac) and/or electrical power, and/or light beam(s), and are easily integrated with semiconductor fabrication techniques for quicker and wider adaptation of quantum technologies.



[[Category:G06N10/40]]
[[Category:H03K17/92]]