View source for 20240031697. SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE WITH COMBINED DYNAMIC VISION SENSOR AND IMAGING FUNCTIONS simplified abstract (Sony Semiconductor Solutions Corporation)

=SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE WITH COMBINED DYNAMIC VISION SENSOR AND IMAGING FUNCTIONS=


==Organization Name==

[[:Category:Sony Semiconductor Solutions Corporation|Sony Semiconductor Solutions Corporation]]


[[Category:Sony Semiconductor Solutions Corporation]]

==Inventor(s)==

[[:Category:Pooria Mostafalu of Penfield NY (US)|Pooria Mostafalu of Penfield NY (US)]][[Category:Pooria Mostafalu of Penfield NY (US)]]

[[:Category:Frederick Brady of Webster NY (US)|Frederick Brady of Webster NY (US)]][[Category:Frederick Brady of Webster NY (US)]]

==SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE WITH COMBINED DYNAMIC VISION SENSOR AND IMAGING FUNCTIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240031697 titled 'SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE WITH COMBINED DYNAMIC VISION SENSOR AND IMAGING FUNCTIONS

==Simplified Explanation==

The abstract describes an imaging device that consists of multiple unit pixels, each separated from the others by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors are all located within a pixel area defined by the isolation structure.

* The imaging device has a plurality of unit pixels or pixels, each separated by an isolation structure.
* Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit.
* A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit.
* A second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit.
* The isolation structure is in the form of a full thickness dielectric trench isolation structure.

Potential Applications:
* This imaging device can be used in digital cameras, smartphones, and other electronic devices that require image capturing capabilities.
* It can be utilized in surveillance systems for video recording and monitoring.
* Medical imaging devices such as X-ray machines and ultrasound scanners can benefit from this technology.

Problems Solved:
* The isolation structure helps in preventing cross-talk and interference between unit pixels, resulting in improved image quality.
* The inclusion of address event detection readout circuit allows for efficient detection of specific events or patterns in the captured images.

Benefits:
* The isolation structure ensures better isolation between unit pixels, reducing noise and improving image clarity.
* The address event detection readout circuit enables selective detection of specific events, providing more flexibility in image analysis.
* The compact design of the device allows for higher pixel density, leading to higher resolution images.


==Original Abstract Submitted==

an imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. a first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. the photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. the isolation structure may be in the form of a full thickness dielectric trench isolation structure.



[[Category:H04N25/702]]
[[Category:H01L27/146]]
[[Category:H04N25/75]]