View source for 20240015953. DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FORMING THE SAME simplified abstract (Winbond Electronics Corp.)

=DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FORMING THE SAME=


==Organization Name==

[[:Category:Winbond Electronics Corp.|Winbond Electronics Corp.]]


[[Category:Winbond Electronics Corp.]]

==Inventor(s)==

[[:Category:Ying-Chu Yen of Taichung City (TW)|Ying-Chu Yen of Taichung City (TW)]][[Category:Ying-Chu Yen of Taichung City (TW)]]

==DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240015953 titled 'DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FORMING THE SAME

==Simplified Explanation==

The abstract describes a method for forming a dynamic random access memory (DRAM) by creating an isolation structure in a substrate to define an active region. A bit line trench is formed in the active region to divide two active pillars, and a buried bit line is formed in the trench. An insulating material is then formed over the bit line in the trench, with its top surface lower than the top surface of the substrate. A trench is formed over the insulating material, and a shallow recess is created on the sidewalls of each active pillar exposed by the trench to form a neck channel region. Finally, a buried word line is formed in the shallow recess.

* The method involves forming an isolation structure in a substrate to define an active region.
* A bit line trench is created in the active region to divide two active pillars.
* A buried bit line is formed in the bit line trench.
* An insulating material is applied over the bit line in the trench, with its top surface lower than the substrate's top surface.
* A trench is formed over the insulating material.
* A shallow recess is made on the exposed sidewalls of each active pillar in the trench to create a neck channel region.
* A buried word line is formed in the shallow recess.

Potential applications of this technology:

* Memory devices: The method can be used to fabricate dynamic random access memory (DRAM) devices, which are widely used in various electronic devices such as computers, smartphones, and tablets.

Problems solved by this technology:

* Isolation and division of active regions: The method provides a way to isolate and define active regions in a substrate, allowing for the formation of individual memory cells.
* Efficient bit line and word line formation: The buried bit line and word line structures enable efficient data storage and retrieval in the memory device.

Benefits of this technology:

* Increased memory density: The method allows for the creation of more memory cells within a given area, leading to higher memory density and increased storage capacity.
* Improved performance: The isolation and division of active regions, along with the efficient bit line and word line structures, contribute to improved performance and faster data access in the memory device.


==Original Abstract Submitted==

a method for forming a dynamic random access memory (dram) includes forming an isolation structure in a substrate to define an active region. the method also includes forming a bit line trench in the active region to divide two active pillars. the method also includes forming a buried bit line in the bit line trench. the method also includes forming an insulating material over the bit line in the bit line trench. the top surface of the insulating material is lower than the top surface of the substrate. a trench is formed over the insulating material. the method also includes forming a shallow recess on the sidewalls of each of the active pillars exposed by the trench to make that each of the active pillars has a neck channel region. the method also includes forming a buried word line in the shallow recess.



[[Category:H10B12/00]]