View source for 20240014306. Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof simplified abstract (United Microelectronics Corp.)

=Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof=


==Organization Name==

[[:Category:United Microelectronics Corp.|United Microelectronics Corp.]]


[[Category:United Microelectronics Corp.]]

==Inventor(s)==

[[:Category:Chih-Tung Yeh of Taoyuan City (TW)|Chih-Tung Yeh of Taoyuan City (TW)]][[Category:Chih-Tung Yeh of Taoyuan City (TW)]]

[[:Category:Ruey-Chyr Lee of Taichung City (TW)|Ruey-Chyr Lee of Taichung City (TW)]][[Category:Ruey-Chyr Lee of Taichung City (TW)]]

[[:Category:Wen-Jung Liao of Hsinchu City (TW)|Wen-Jung Liao of Hsinchu City (TW)]][[Category:Wen-Jung Liao of Hsinchu City (TW)]]

==Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240014306 titled 'Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof

==Simplified Explanation==

The semiconductor device described in the patent application has features of both depletion mode (d-mode) and enhancement mode (e-mode) GaN devices. It includes a substrate with a first and second region, a GaN channel layer on the substrate, an AlGaN layer on the GaN channel layer, a p-GaN layer on the AlGaN layer in the first region, an Al-based passivation layer on the AlGaN and p-GaN layers, and gate contact openings.

* The gate contact openings on the first region extend through the Al-based passivation layer to the top surface of the p-GaN layer.
* The gate contact opening on the second region extends through the Al-based passivation layer to the surface of the AlGaN layer.
* The surfaces of the p-GaN layer and AlGaN layer are both flat surfaces without a recess feature.

Potential Applications:
* Power electronics: The device can be used in power electronic applications such as power converters, inverters, and motor drives.
* RF amplifiers: The device can be used in radio frequency (RF) amplifiers for wireless communication systems.
* LED lighting: The device can be used in LED lighting applications for efficient power conversion.

Problems Solved:
* Integration of d-mode and e-mode devices: The device solves the problem of integrating both depletion mode and enhancement mode GaN devices into a single semiconductor device.
* Gate contact design: The gate contact openings allow for easy access to the p-GaN and AlGaN layers, enabling efficient control of the device.

Benefits:
* Versatility: The device provides the flexibility of operating in both depletion mode and enhancement mode, allowing for a wider range of applications.
* Improved performance: The flat surfaces of the p-GaN and AlGaN layers without a recess feature enhance the device's performance and reliability.
* Simplified fabrication process: The device's design simplifies the fabrication process by eliminating the need for complex recess features.


==Original Abstract Submitted==

a semiconductor device provided with features of depletion mode (d-mode) and enhancement mode (e-mode) gan devices, including a substrate with a first region and a second region defined thereon, a gan channel layer on the substrate, a algan layer on the gan channel layer, a p-gan layer on the algan layer in the first region, a al-based passivation layer on the algan layer and p-gan layer, and gate contact openings, wherein the gate contact opening on the first region extends through the al-based passivation layer to the top surface of p-gan layer, the gate contact opening on the second region extends through the al-based passivation layer to the surface of algan layer, and the surfaces of p-gan layer and algan layer are both flat surfaces without recess feature.



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