View source for 20240014261. REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)

=REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC|SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC]]


[[Category:SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC]]

==Inventor(s)==

[[:Category:Shengling Deng of Chandler AZ (US)|Shengling Deng of Chandler AZ (US)]][[Category:Shengling Deng of Chandler AZ (US)]]

[[:Category:Dean E. Probst of West Jordan UT (US)|Dean E. Probst of West Jordan UT (US)]][[Category:Dean E. Probst of West Jordan UT (US)]]

[[:Category:Zia Hossain of Tempe AZ (US)|Zia Hossain of Tempe AZ (US)]][[Category:Zia Hossain of Tempe AZ (US)]]

==REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240014261 titled 'REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES

==Simplified Explanation==

The abstract of the patent application describes a method for forming a diode junction in a semiconductor region by creating a well region of one conductivity type within the semiconductor region of another conductivity type. The method also involves the formation of at least one dielectric region within the semiconductor region, with the upper surface of the dielectric region located in the well region at a depth above the diode junction.

* The method involves forming a well region of one conductivity type within a semiconductor region of another conductivity type.
* An interface between the well region and the semiconductor region defines a diode junction below the upper surface of the semiconductor region.
* At least one dielectric region is formed within the semiconductor region.
* The upper surface of the dielectric region is located in the well region at a depth above the diode junction.
* The lower surface of the dielectric region is located in the semiconductor region at the same depth as the diode junction or below it.

Potential applications of this technology:

* Semiconductor devices: This method can be used in the fabrication of various semiconductor devices, such as diodes, transistors, and integrated circuits.
* Power electronics: The formation of diode junctions using this method can be beneficial in power electronic devices, such as rectifiers and voltage regulators.
* Photovoltaics: The technology can be applied in the manufacturing of solar cells, where diode junctions are essential for converting sunlight into electricity.

Problems solved by this technology:

* Precise diode junction formation: The method provides a way to accurately define the depth and location of the diode junction within the semiconductor region.
* Integration with dielectric regions: The technology allows for the formation of dielectric regions within the semiconductor region, which can be useful for insulation and device isolation purposes.

Benefits of this technology:

* Improved device performance: The precise formation of diode junctions and the integration of dielectric regions can enhance the overall performance and reliability of semiconductor devices.
* Enhanced manufacturing flexibility: The method offers flexibility in designing and fabricating semiconductor devices with specific diode junction characteristics.
* Increased efficiency in energy conversion: The technology can contribute to the development of more efficient power electronic devices and photovoltaic systems.


==Original Abstract Submitted==

in a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type an interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. the method can further include forming at least one dielectric region in the semiconductor region. a dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.



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