View source for 20240012567. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (MACRONIX INTERNATIONAL CO., LTD.)

=MEMORY DEVICE AND METHOD FOR OPERATING THE SAME=


==Organization Name==

[[:Category:MACRONIX INTERNATIONAL CO., LTD.|MACRONIX INTERNATIONAL CO., LTD.]]


[[Category:MACRONIX INTERNATIONAL CO., LTD.]]

==Inventor(s)==

[[:Category:Po-Hao Tseng of Taichung City (TW)|Po-Hao Tseng of Taichung City (TW)]][[Category:Po-Hao Tseng of Taichung City (TW)]]

[[:Category:Feng-Min Lee of Hsinchu City (TW)|Feng-Min Lee of Hsinchu City (TW)]][[Category:Feng-Min Lee of Hsinchu City (TW)]]

[[:Category:Tian-Cih Bo of Zhubei City (TW)|Tian-Cih Bo of Zhubei City (TW)]][[Category:Tian-Cih Bo of Zhubei City (TW)]]

[[:Category:Ming-Hsiu Lee of Hsinchu (TW)|Ming-Hsiu Lee of Hsinchu (TW)]][[Category:Ming-Hsiu Lee of Hsinchu (TW)]]

==MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240012567 titled 'MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

==Simplified Explanation==

The patent application describes a memory device that consists of channel layers, word lines, memory layers, and memory cells. The memory cells are located at the intersections of the channel layers and word lines. The device is designed to perform a first operation multiple times and a second operation multiple times, where the number of times for the first operation is equal to or greater than the number of times for the second operation. 

In the first operation, a first electric field is generated in a portion of the memory layers. In the second operation, the word lines are configured to produce a second electric field in the same portion of the memory layers, but with a different field direction from the first electric field.

* The memory device includes channel layers, word lines, memory layers, and memory cells.
* The memory cells are defined at the cross-points of the channel layers and word lines.
* The device performs a first operation m times and a second operation n times, where m is equal to or larger than n.
* In the first operation, a first electric field is generated in a portion of the memory layers.
* In the second operation, the word lines produce a second electric field in the same portion of the memory layers, but with a different field direction from the first electric field.

Potential Applications:
* This memory device can be used in various electronic devices such as computers, smartphones, and tablets.
* It can be utilized in data storage systems, improving the efficiency and capacity of memory.

Problems Solved:
* The memory device allows for multiple operations to be performed, enhancing the functionality and versatility of the device.
* The different field directions of the electric fields in the memory layers enable more efficient data storage and retrieval.

Benefits:
* The memory device provides improved performance and reliability in data storage.
* It allows for more efficient use of memory space and increased memory capacity.
* The device can contribute to the development of faster and more advanced electronic devices.


==Original Abstract Submitted==

a memory device is provided. the memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. the memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. in the first operation, a first electric field is produced in a portion of the memory layers. the word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.



[[Category:G06F3/06]]