View source for 18545082. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)|Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)]][[Category:Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)]]

==SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18545082 titled 'SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

==Simplified Explanation==

The method described in the abstract involves manufacturing a semiconductor device by forming sacrificial layers, a stack with alternating material layers, a channel structure, a slit, and source layers connected to the channel structure.

* Forming a first sacrificial layer with two portions of different thicknesses
* Creating a stack with alternating material layers on the sacrificial layer
* Forming a channel structure and a slit passing through the stack
* Removing the sacrificial layer to create an opening
* Forming source layers connected to the channel structure in the opening

== Potential Applications ==
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.

== Problems Solved ==
This method allows for the precise formation of source layers connected to the channel structure in semiconductor devices, improving their performance and reliability.

== Benefits ==
- Enhanced performance of semiconductor devices
- Improved reliability and durability
- Precise and controlled manufacturing process

== Potential Commercial Applications ==
The technology could be utilized in the production of high-performance electronic devices, leading to advancements in fields such as telecommunications, computing, and consumer electronics.

== Possible Prior Art ==
One possible prior art could be the use of sacrificial layers in semiconductor manufacturing processes to create intricate structures within the devices. 

=== What are the specific materials used in the stack formation process? ===

The specific materials used in the stack formation process are not mentioned in the abstract. Further details on the materials and their properties would be necessary to fully understand the manufacturing process.

=== How does the removal of the sacrificial layer impact the overall structure of the semiconductor device? ===

The abstract does not provide information on how the removal of the sacrificial layer affects the overall structure of the semiconductor device. Understanding the structural changes resulting from this step would be crucial in evaluating the effectiveness of the manufacturing method.


==Original Abstract Submitted==

A method of manufacturing a semiconductor device according to an embodiment of the present disclosure may include forming a first sacrificial layer including a first portion and a second portion having a thickness thicker than a thickness of the first portion, forming a stack including first material layers and second material layers alternating with each other on the first sacrificial layer, forming a channel structure passing through the stack and extending to the first portion, forming a slit passing through the stack and extending to the second portion, removing the first sacrificial layer through the slit to form a first opening, and forming a second source layer connected to the channel structure in the first opening.



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