View source for 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)

=NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Jun Sung Kang of Portland OR (US)|Jun Sung Kang of Portland OR (US)]][[Category:Jun Sung Kang of Portland OR (US)]]

[[:Category:Kai Loon Cheong of Beaverton OR (US)|Kai Loon Cheong of Beaverton OR (US)]][[Category:Kai Loon Cheong of Beaverton OR (US)]]

[[:Category:Erica J. Thompson of Beaverton OR (US)|Erica J. Thompson of Beaverton OR (US)]][[Category:Erica J. Thompson of Beaverton OR (US)]]

[[:Category:Biswajeet Guha of Hillsboro OR (US)|Biswajeet Guha of Hillsboro OR (US)]][[Category:Biswajeet Guha of Hillsboro OR (US)]]

[[:Category:William Hsu of Hillsboro OR (US)|William Hsu of Hillsboro OR (US)]][[Category:William Hsu of Hillsboro OR (US)]]

[[:Category:Dax M. Crum of Beaverton OR (US)|Dax M. Crum of Beaverton OR (US)]][[Category:Dax M. Crum of Beaverton OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Bruce Beattie of Portland OR (US)|Bruce Beattie of Portland OR (US)]][[Category:Bruce Beattie of Portland OR (US)]]

==NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18523637 titled 'NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS

==Simplified Explanation==

The patent application describes non-planar integrated circuit structures with mitigated source or drain etch from replacement gate process. 

* Integrated circuit structure includes a fin or nanowire
* Gate stack with gate dielectric and gate electrode
* Dielectric spacers along sides of gate stack
* Insulating material between fin/nanowire and dielectric spacers
* Epitaxial source or drain structures on either side of gate stack

== Potential Applications ==
This technology could be applied in the semiconductor industry for advanced integrated circuits, such as in high-performance computing, mobile devices, and IoT applications.

== Problems Solved ==
This technology helps mitigate source or drain etch issues during the replacement gate process, improving the reliability and performance of integrated circuits.

== Benefits ==
- Enhanced reliability of integrated circuits
- Improved performance of semiconductor devices
- Potential for higher integration density

== Potential Commercial Applications ==
* "Advanced Integrated Circuit Structures for Enhanced Performance and Reliability"

== Possible Prior Art ==
There may be prior art related to non-planar integrated circuit structures and mitigation of source or drain etch issues, but specific examples are not provided in the abstract.

== Unanswered Questions ==

=== How does this technology compare to existing methods for mitigating source or drain etch issues in integrated circuits? ===

This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this approach over others.

=== What are the specific performance improvements that can be expected from implementing this technology in integrated circuits? ===

The article does not delve into the specific performance enhancements that can be achieved by using this technology, leaving room for further exploration into the potential benefits for semiconductor devices.


==Original Abstract Submitted==

Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.



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