View source for 18513624. SEMICONDUCTOR DEVICE AND FABRICATION METHOD simplified abstract (FUJI ELECTRIC CO., LTD.)

=SEMICONDUCTOR DEVICE AND FABRICATION METHOD=


==Organization Name==

[[:Category:FUJI ELECTRIC CO., LTD.|FUJI ELECTRIC CO., LTD.]]


[[Category:FUJI ELECTRIC CO., LTD.]]

==Inventor(s)==

[[:Category:Yasunori Agata of Matsumoto-city (JP)|Yasunori Agata of Matsumoto-city (JP)]][[Category:Yasunori Agata of Matsumoto-city (JP)]]

[[:Category:Takahiro Tamura of Matsumoto-city (JP)|Takahiro Tamura of Matsumoto-city (JP)]][[Category:Takahiro Tamura of Matsumoto-city (JP)]]

[[:Category:Toru Ajiki of Matsumoto-city (JP)|Toru Ajiki of Matsumoto-city (JP)]][[Category:Toru Ajiki of Matsumoto-city (JP)]]

==SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18513624 titled 'SEMICONDUCTOR DEVICE AND FABRICATION METHOD

==Simplified Explanation==

A semiconductor device with a unique carrier concentration distribution is described in the patent application. Here are some key points to explain the innovation:

* The semiconductor device includes a hydrogen-containing region with hydrogen and helium.
* The carrier concentration distribution in the hydrogen-containing region has specific points such as local maximum points, local minimum points, and flat points.
* The highest point of the helium concentration peak is positioned between the first and second local maximum points.
* The carrier concentration is lower at the first intermediate point compared to the second intermediate point.

== Potential Applications ==
The technology described in this patent application could potentially be used in:
* Semiconductor manufacturing
* Electronics industry
* Solar energy applications

== Problems Solved ==
This technology helps address the following issues:
* Improving carrier concentration distribution in semiconductor devices
* Enhancing performance and efficiency of electronic components
* Optimizing hydrogen and helium incorporation in semiconductor substrates

== Benefits ==
The benefits of this technology include:
* Increased efficiency of semiconductor devices
* Enhanced performance of electronic systems
* Improved reliability and stability of semiconductor components

== Potential Commercial Applications ==
The technology could find commercial applications in:
* Semiconductor device manufacturing companies
* Electronics manufacturers
* Solar energy companies

== Possible Prior Art ==
One possible prior art for this technology could be research on carrier concentration distribution in semiconductor devices and the incorporation of hydrogen and helium in semiconductor substrates.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor devices in terms of performance and efficiency? ===
The article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

=== What are the specific manufacturing processes involved in creating the carrier concentration distribution described in the patent application? ===
The article does not delve into the specific manufacturing processes required to implement the carrier concentration distribution in semiconductor devices.


==Original Abstract Submitted==

A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.



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