View source for 18457440. GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)

=GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL=


==Organization Name==

[[:Category:Panasonic Intellectual Property Management Co., Ltd.|Panasonic Intellectual Property Management Co., Ltd.]]


[[Category:Panasonic Intellectual Property Management Co., Ltd.]]

==Inventor(s)==

[[:Category:AKIO Ueta of Hyogo (JP)|AKIO Ueta of Hyogo (JP)]][[Category:AKIO Ueta of Hyogo (JP)]]

[[:Category:HIROSHI Ohno of Osaka (JP)|HIROSHI Ohno of Osaka (JP)]][[Category:HIROSHI Ohno of Osaka (JP)]]

==GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18457440 titled 'GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

==Simplified Explanation==

==Abstract==
A patent application describes a crystal substrate made of group III nitride with a main surface and a back surface. The main surface and back surface have low average dislocation densities, and the difference between the two densities is small. The crystal axis of the main surface is also designed to have a specific radius of curvature.

* The crystal substrate is made of group III nitride material.
* The main surface and back surface of the substrate have low average dislocation densities.
* The difference in dislocation density between the main surface and back surface is small.
* The crystal axis of the main surface has a specific radius of curvature.

==Potential Applications==
* Semiconductor devices: The crystal substrate can be used as a foundation for the fabrication of high-performance semiconductor devices.
* Optoelectronics: The low dislocation density of the substrate can enhance the performance of optoelectronic devices such as LEDs and laser diodes.
* Power electronics: The crystal substrate can be utilized in power electronic devices that require high reliability and efficiency.

==Problems Solved==
* High dislocation density: The patent addresses the issue of high dislocation density in crystal substrates, which can negatively impact the performance and reliability of electronic devices.
* Warpage of crystal axis: The specific radius of curvature of the crystal axis helps to minimize warpage, ensuring better alignment and stability in device fabrication.

==Benefits==
* Improved device performance: The low dislocation density of the crystal substrate enhances the performance and reliability of electronic devices.
* Better manufacturing yield: The reduced warpage of the crystal axis allows for better alignment during device fabrication, resulting in higher manufacturing yield.
* Enhanced device efficiency: The use of the crystal substrate can lead to improved efficiency in power electronic devices, reducing energy losses.


==Original Abstract Submitted==

A group III nitride crystal substrate has a main surface and a back surface opposite to the main surface. The average dislocation density of the main surface and the average dislocation density of the back surface are less than or equal to 6.0×10cm. Furthermore, the difference between the average dislocation density of the main surface and the average dislocation density of the back surface is less than or equal to 5.0×10cm. The warpage of the crystal axis of the main surface has a radius of curvature of more than or equal to 30 m.



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[[Category:C30B25/20]]
[[Category:H01L29/04]]