View source for 18447890. IMAGE SENSOR WITH HIGH QUANTUM EFFICIENCY simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=IMAGE SENSOR WITH HIGH QUANTUM EFFICIENCY=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Feng-Chien Hsieh of Pingtung City (TW)|Feng-Chien Hsieh of Pingtung City (TW)]][[Category:Feng-Chien Hsieh of Pingtung City (TW)]]

[[:Category:Hsin-Chi Chen of Tainan City (TW)|Hsin-Chi Chen of Tainan City (TW)]][[Category:Hsin-Chi Chen of Tainan City (TW)]]

[[:Category:Kuo-Cheng Lee of Tainan City (TW)|Kuo-Cheng Lee of Tainan City (TW)]][[Category:Kuo-Cheng Lee of Tainan City (TW)]]

[[:Category:Yun-Wei Cheng of Taipei City (TW)|Yun-Wei Cheng of Taipei City (TW)]][[Category:Yun-Wei Cheng of Taipei City (TW)]]

==IMAGE SENSOR WITH HIGH QUANTUM EFFICIENCY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18447890 titled 'IMAGE SENSOR WITH HIGH QUANTUM EFFICIENCY

==Simplified Explanation==

The present disclosure describes an image sensor device and a method for forming the same. The device includes a semiconductor layer with a first and second surface. It also includes an interconnect structure formed over the first surface, radiation sensing regions formed in the second surface, a metal stack over the second radiation sensing region, and a passivation layer over the first radiation sensing region.

* The image sensor device includes a semiconductor layer with two surfaces.
* An interconnect structure is formed over the first surface of the semiconductor layer.
* Radiation sensing regions are formed in the second surface of the semiconductor layer.
* A metal stack is formed over the second radiation sensing region.
* A passivation layer is formed through the metal stack and over the top surface of the first radiation sensing region.
* The metal stack is located between the passivation layer and the other top surface of the second radiation sensing region.

==Potential Applications==
* Image sensors for digital cameras, smartphones, and other electronic devices.
* Medical imaging devices.
* Surveillance cameras and security systems.
* Automotive cameras for advanced driver assistance systems (ADAS).

==Problems Solved==
* Provides a structure for an image sensor device with improved radiation sensing capabilities.
* Enables efficient interconnectivity and integration of components in the image sensor device.
* Protects the radiation sensing regions from external factors and enhances their performance.

==Benefits==
* Enhanced image quality and sensitivity in image sensor devices.
* Improved reliability and durability of the image sensor device.
* Enables miniaturization and integration of image sensor devices in various electronic devices.
* Cost-effective manufacturing process for image sensor devices.


==Original Abstract Submitted==

The present disclosure describes an image sensor device and a method for forming the same. The image sensor device can include a semiconductor layer. The semiconductor layer can include a first surface and a second surface. The image sensor device can further include an interconnect structure formed over the first surface of the semiconductor layer, first and second radiation sensing regions formed in the second surface of the semiconductor layer, a metal stack formed over the second radiation sensing region, and a passivation layer formed through the metal stack and over a top surface of the first radiation sensing region. The metal stack can be between the passivation layer and an other top surface of the second radiation sensing region.



[[Category:H01L27/146]]