View source for 18446234. THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE simplified abstract (Samsung Display Co., Ltd.)

=THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE=


==Organization Name==

[[:Category:Samsung Display Co., Ltd.|Samsung Display Co., Ltd.]]


[[Category:Samsung Display Co., Ltd.]]

==Inventor(s)==

[[:Category:Sun Hee Lee of Yongin-si (KR)|Sun Hee Lee of Yongin-si (KR)]][[Category:Sun Hee Lee of Yongin-si (KR)]]

[[:Category:Eun Hye Ko of Yongin-si (KR)|Eun Hye Ko of Yongin-si (KR)]][[Category:Eun Hye Ko of Yongin-si (KR)]]

[[:Category:Sang Woo Sohn of Yongin-si (KR)|Sang Woo Sohn of Yongin-si (KR)]][[Category:Sang Woo Sohn of Yongin-si (KR)]]

[[:Category:Jung Hoon Lee of Yongin-si (KR)|Jung Hoon Lee of Yongin-si (KR)]][[Category:Jung Hoon Lee of Yongin-si (KR)]]

[[:Category:Hyun Mo Lee of Yongin-si (KR)|Hyun Mo Lee of Yongin-si (KR)]][[Category:Hyun Mo Lee of Yongin-si (KR)]]

[[:Category:Hyun Jun Jeong of Yongin-si (KR)|Hyun Jun Jeong of Yongin-si (KR)]][[Category:Hyun Jun Jeong of Yongin-si (KR)]]

==THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18446234 titled 'THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE

==Simplified Explanation==

The patent application describes a thin-film transistor with specific angles for the surfaces of the gate electrode and gate insulating layer. 

* The thin-film transistor includes an active layer with a channel region, a source region, and a drain region.
* It also has a gate insulating layer on the channel region and a gate electrode on the gate insulating layer.
* The gate electrode has side surfaces with obtuse angles with respect to the boundary surface between the gate insulating layer and the gate electrode.
* The gate insulating layer also has side surfaces with obtuse angles with respect to the boundary surface between the gate insulating layer and the gate electrode.

== Potential Applications ==
This technology could be applied in:
* Display panels
* Touchscreen devices
* Electronic circuits

== Problems Solved ==
This technology helps in:
* Improving transistor performance
* Enhancing device reliability

== Benefits ==
The benefits of this technology include:
* Increased efficiency
* Better overall device performance

== Potential Commercial Applications ==
This technology could be commercially used in:
* Consumer electronics
* Medical devices
* Automotive displays

== Possible Prior Art ==
There is no known prior art for this specific configuration of thin-film transistors.

== Unanswered Questions ==

=== How does this technology compare to existing thin-film transistor designs? ===
Answer: This article does not provide a direct comparison with existing designs, leaving the reader to wonder about the advantages and disadvantages of this new configuration.

=== What specific manufacturing processes are required to achieve the unique angles described in the patent application? ===
Answer: The article does not delve into the specific manufacturing techniques needed to produce the thin-film transistors with the specified angles, leaving a gap in understanding the practical implementation of this innovation.


==Original Abstract Submitted==

A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).



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