View source for 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)

=TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Gilbert Dewey of Hillsboro OR (US)|Gilbert Dewey of Hillsboro OR (US)]][[Category:Gilbert Dewey of Hillsboro OR (US)]]

[[:Category:Ryan Keech of Portland OR (US)|Ryan Keech of Portland OR (US)]][[Category:Ryan Keech of Portland OR (US)]]

[[:Category:Cory Bomberger of Portland OR (US)|Cory Bomberger of Portland OR (US)]][[Category:Cory Bomberger of Portland OR (US)]]

[[:Category:Cheng-Ying Huang of Hillsboro OR (US)|Cheng-Ying Huang of Hillsboro OR (US)]][[Category:Cheng-Ying Huang of Hillsboro OR (US)]]

[[:Category:Ashish Agrawal of Hillsboro OR (US)|Ashish Agrawal of Hillsboro OR (US)]][[Category:Ashish Agrawal of Hillsboro OR (US)]]

[[:Category:Willy Rachmady of Beaverton OR (US)|Willy Rachmady of Beaverton OR (US)]][[Category:Willy Rachmady of Beaverton OR (US)]]

[[:Category:Anand Murthy of Portland OR (US)|Anand Murthy of Portland OR (US)]][[Category:Anand Murthy of Portland OR (US)]]

==TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18395192 titled 'TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION

==Simplified Explanation==

The patent application describes a device with a transistor made of group III-V or group IV semiconductor material, with separate source and drain structures and a gate structure in between. The device level includes a metallization structure connected to the semiconductor device.

* The device includes a transistor with a body made of single crystal group III-V or group IV semiconductor material.
* The transistor has a source structure on one portion of the body and a drain structure on another portion, with a gate structure in between.
* The gate structure consists of a first gate structure portion in a recess in the body and a second gate structure portion between the source and drain structures.
* A source contact is connected to the source structure, and a drain contact is connected to the drain structure, with the source contact in contact with the metallization structure in the device level.

== Potential Applications ==
This technology could be applied in:
* High-performance electronic devices
* Advanced semiconductor manufacturing processes

== Problems Solved ==
This technology helps in:
* Improving transistor performance
* Enhancing device integration and miniaturization

== Benefits ==
The benefits of this technology include:
* Increased efficiency and speed of electronic devices
* Better control and reliability of semiconductor components

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar semiconductor materials in transistor manufacturing processes.

=== Unanswered Questions ===

=== How does this technology compare to traditional transistor designs? ===
This article does not provide a direct comparison between this technology and traditional transistor designs. 

=== What are the specific performance improvements seen with this innovation? ===
The article does not detail the specific performance improvements achieved with this innovation.


==Original Abstract Submitted==

A device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. The transistor has a body including a single crystal group III-V or group IV semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. The transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. A source contact is coupled with the source structure and a drain contact is coupled with the drain structure. The source contact is in contact with the metallization structure in the device level.



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