View source for 18302375. CRITICAL DIMENSION INSPECTION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=CRITICAL DIMENSION INSPECTION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Su Bin Kong of Suwon-si (KR)|Su Bin Kong of Suwon-si (KR)]][[Category:Su Bin Kong of Suwon-si (KR)]]

[[:Category:Sang-Ho Yun of Suwon-si (KR)|Sang-Ho Yun of Suwon-si (KR)]][[Category:Sang-Ho Yun of Suwon-si (KR)]]

[[:Category:Woo Jin Jung of Suwon-si (KR)|Woo Jin Jung of Suwon-si (KR)]][[Category:Woo Jin Jung of Suwon-si (KR)]]

==CRITICAL DIMENSION INSPECTION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18302375 titled 'CRITICAL DIMENSION INSPECTION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

==Simplified Explanation==

The abstract of this patent application describes a method for inspecting a critical dimension, which involves several steps such as applying a photoresist on a substrate, irradiating a dose of light onto the photoresist, developing the photoresist to form a pattern, and using this pattern as a mask for an etching process to create multiple patterns. The method also includes measuring the width of each pattern and the spacing between adjacent patterns, and using this information to identify the cause of any defects in the photo process.

* The method involves applying a photoresist on a substrate and irradiating it with light to create a pattern.
* The pattern is then used as a mask for an etching process to create multiple patterns.
* The width of each pattern and the spacing between adjacent patterns are measured.
* The measured width and spacing are used to identify the cause of any defects in the photo process.

Potential applications of this technology:

* Quality control in semiconductor manufacturing: This method can be used to inspect critical dimensions in the production of semiconductor devices, ensuring that the patterns meet the required specifications.
* Process optimization: By identifying the cause of defects in the photo process, manufacturers can make adjustments to improve the overall manufacturing process and increase yield.

Problems solved by this technology:

* Defect identification: The method allows for the identification of defects in the photo process, which can help manufacturers pinpoint the root cause and take corrective actions.
* Quality assurance: By measuring the width and spacing of patterns, manufacturers can ensure that the critical dimensions meet the required specifications, improving the overall quality of the final product.

Benefits of this technology:

* Improved manufacturing efficiency: By identifying and addressing defects in the photo process, manufacturers can reduce waste and improve yield, leading to higher efficiency in production.
* Enhanced product quality: The method allows for precise measurement of critical dimensions, ensuring that the final product meets the required specifications and quality standards.


==Original Abstract Submitted==

A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.



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