View source for 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Hyojin Ahn of Suwon-si (KR)|Hyojin Ahn of Suwon-si (KR)]][[Category:Hyojin Ahn of Suwon-si (KR)]]

[[:Category:Seoyeong Lee of Suwon-si (KR)|Seoyeong Lee of Suwon-si (KR)]][[Category:Seoyeong Lee of Suwon-si (KR)]]

[[:Category:Hoon Jo of Suwon-si (KR)|Hoon Jo of Suwon-si (KR)]][[Category:Hoon Jo of Suwon-si (KR)]]

==NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18215320 titled 'NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE

==Simplified Explanation==

The abstract describes a method for operating a storage device that involves obtaining points between threshold voltage distributions of memory cells, calculating voltage levels based on reference count values, classifying memory cells into coupling patterns, and performing read operations based on these patterns and voltage levels.

* Obtaining points between threshold voltage distributions of memory cells
* Calculating voltage levels based on reference count values
* Classifying memory cells into coupling patterns based on adjacent cells
* Performing read operations based on coupling patterns and voltage levels

== Potential Applications ==
This technology could be applied in various storage devices such as solid-state drives, flash memory, and other non-volatile memory systems.

== Problems Solved ==
This technology helps in improving the efficiency and accuracy of read operations in storage devices by classifying memory cells into coupling patterns and using calculated voltage levels.

== Benefits ==
The benefits of this technology include faster and more reliable read operations, increased data storage capacity, and enhanced performance of storage devices.

== Potential Commercial Applications ==
Potential commercial applications of this technology include use in consumer electronics, data centers, cloud storage systems, and other computing devices.

== Possible Prior Art ==
One possible prior art in this field could be the use of adaptive voltage levels for read operations in memory devices to improve data retrieval accuracy and speed.

== Unanswered Questions ==
=== How does this method compare to existing techniques for read operations in storage devices? ===
This article does not provide a direct comparison with existing techniques for read operations in storage devices. Further research or experimentation may be needed to determine the advantages of this method over others.

=== What impact could this technology have on the overall performance and reliability of storage devices? ===
While the benefits of this technology are discussed, the specific impact on the overall performance and reliability of storage devices is not clearly outlined. Additional studies or real-world implementations may be necessary to fully understand the potential impact.


==Original Abstract Submitted==

In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.



[[Category:G06F3/06]]
[[Category:G11C16/04]]
[[Category:G11C16/08]]
[[Category:G11C16/26]]