View source for 18165595. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

=SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE=


==Organization Name==

[[:Category:Kioxia Corporation|Kioxia Corporation]]


[[Category:Kioxia Corporation]]

==Inventor(s)==

[[:Category:Daisuke Watanabe of Yokkaichi Mie (JP)|Daisuke Watanabe of Yokkaichi Mie (JP)]][[Category:Daisuke Watanabe of Yokkaichi Mie (JP)]]

[[:Category:Akifumi Gawase of Kuwana Mie (JP)|Akifumi Gawase of Kuwana Mie (JP)]][[Category:Akifumi Gawase of Kuwana Mie (JP)]]

[[:Category:Takeshi Iwasaki of Kuwana Mie (JP)|Takeshi Iwasaki of Kuwana Mie (JP)]][[Category:Takeshi Iwasaki of Kuwana Mie (JP)]]

[[:Category:Kazuhiro Katono of Yokkaichi Mie (JP)|Kazuhiro Katono of Yokkaichi Mie (JP)]][[Category:Kazuhiro Katono of Yokkaichi Mie (JP)]]

[[:Category:Yusuke Muto of Yokkaichi Mie (JP)|Yusuke Muto of Yokkaichi Mie (JP)]][[Category:Yusuke Muto of Yokkaichi Mie (JP)]]

[[:Category:Yusuke Miki of Yokkaichi Mie (JP)|Yusuke Miki of Yokkaichi Mie (JP)]][[Category:Yusuke Miki of Yokkaichi Mie (JP)]]

[[:Category:Akinori Kimura of Yokkaichi Mie (JP)|Akinori Kimura of Yokkaichi Mie (JP)]][[Category:Akinori Kimura of Yokkaichi Mie (JP)]]

==SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18165595 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a first electrode, a second electrode, an oxide semiconductor, and a first oxide layer containing a predetermined element, oxygen, and an additional element. The predetermined element can be tantalum, boron, hafnium, silicon, zirconium, or niobium, while the additional element can be phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

* The semiconductor device consists of a first electrode, a second electrode, an oxide semiconductor, and a first oxide layer with specific elements.
* The predetermined element in the first oxide layer can be tantalum, boron, hafnium, silicon, zirconium, or niobium.
* The additional element in the first oxide layer can be phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

== Potential Applications ==
The technology described in the patent application could potentially be used in:
* Semiconductor devices
* Electronics industry
* Nanotechnology

== Problems Solved ==
This technology helps in:
* Enhancing the performance of semiconductor devices
* Improving the efficiency of electronic components
* Increasing the reliability of oxide semiconductors

== Benefits ==
The benefits of this technology include:
* Improved conductivity
* Enhanced stability
* Increased durability

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Integrated circuits
* Solar panels
* Consumer electronics

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar elements in oxide semiconductors in the electronics industry.

=== Unanswered Questions ===

=== How does this technology compare to existing oxide semiconductor devices in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing oxide semiconductor devices to evaluate the performance and efficiency differences.

=== What are the specific manufacturing processes involved in creating the semiconductor device described in the patent application? ===
The article does not delve into the detailed manufacturing processes required to produce the semiconductor device with the specific oxide layers and elements mentioned.


==Original Abstract Submitted==

A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.



[[Category:H10B10/00]]
[[Category:H01L29/786]]