View source for 18165502. ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE simplified abstract (SAMSUNG DISPLAY CO., LTD.)

=ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE=


==Organization Name==

[[:Category:SAMSUNG DISPLAY CO., LTD.|SAMSUNG DISPLAY CO., LTD.]]


[[Category:SAMSUNG DISPLAY CO., LTD.]]

==Inventor(s)==

[[:Category:Woo Ho Jeong of ANYANG-SI (KR)|Woo Ho Jeong of ANYANG-SI (KR)]][[Category:Woo Ho Jeong of ANYANG-SI (KR)]]

[[:Category:SE MYUNG Kwon of YONGIN-SI (KR)|SE MYUNG Kwon of YONGIN-SI (KR)]][[Category:SE MYUNG Kwon of YONGIN-SI (KR)]]

[[:Category:YOON HO Kim of ASAN-SI (KR)|YOON HO Kim of ASAN-SI (KR)]][[Category:YOON HO Kim of ASAN-SI (KR)]]

[[:Category:SEOK JE Seong of SEONGNAM-SI (KR)|SEOK JE Seong of SEONGNAM-SI (KR)]][[Category:SEOK JE Seong of SEONGNAM-SI (KR)]]

[[:Category:JOON HOO Choi of SEOUL (KR)|JOON HOO Choi of SEOUL (KR)]][[Category:JOON HOO Choi of SEOUL (KR)]]

==ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18165502 titled 'ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE

==Simplified Explanation==

The abstract describes an organic light-emitting display device that consists of two thin-film transistors (TFTs) placed on a substrate. The first TFT includes a semiconductor layer, a conductive layer overlapping the semiconductor layer, and an insulating layer between them. The second TFT comprises a semiconductor layer and a conductive layer overlapping it. The first semiconductor layer is positioned higher than the second semiconductor layer, with the first layer being made of an oxide semiconductor and the second layer being low temperature polycrystalline silicon (LTPS). The first insulating layer covers the entire first semiconductor layer.

* The device includes two thin-film transistors (TFTs) placed on a substrate.
* The first TFT consists of a semiconductor layer, a conductive layer, and an insulating layer.
* The second TFT comprises a semiconductor layer and a conductive layer.
* The first semiconductor layer is positioned higher than the second semiconductor layer.
* The first semiconductor layer is made of an oxide semiconductor.
* The second semiconductor layer is made of low temperature polycrystalline silicon (LTPS).
* The first insulating layer covers the entire first semiconductor layer.

== Potential Applications ==
* Organic light-emitting displays for consumer electronics such as smartphones, tablets, and televisions.
* Flexible displays for wearable devices like smartwatches and fitness trackers.
* High-resolution displays for virtual reality (VR) and augmented reality (AR) applications.

== Problems Solved ==
* Provides a simplified structure for organic light-emitting display devices.
* Improves the performance and efficiency of the display by using different semiconductor materials for each TFT.
* Enhances the overall image quality and color accuracy of the display.

== Benefits ==
* Enables the production of thinner and lighter display devices.
* Enhances the flexibility and durability of the display, making it suitable for curved or flexible screens.
* Improves power efficiency, leading to longer battery life for portable devices.
* Enhances image quality, color accuracy, and overall display performance.


==Original Abstract Submitted==

An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.



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