View source for 18161331. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jaehyun Yang of Suwon-si (KR)|Jaehyun Yang of Suwon-si (KR)]][[Category:Jaehyun Yang of Suwon-si (KR)]]

[[:Category:Bio Kim of Seoul (KR)|Bio Kim of Seoul (KR)]][[Category:Bio Kim of Seoul (KR)]]

[[:Category:Yujin Kim of Suwon-si (KR)|Yujin Kim of Suwon-si (KR)]][[Category:Yujin Kim of Suwon-si (KR)]]

[[:Category:Kyong-won An of Seoul (KR)|Kyong-won An of Seoul (KR)]][[Category:Kyong-won An of Seoul (KR)]]

[[:Category:Sookyeom Yong of Hwaseong-si (KR)|Sookyeom Yong of Hwaseong-si (KR)]][[Category:Sookyeom Yong of Hwaseong-si (KR)]]

[[:Category:Junggeun Lee of Siheung-si (KR)|Junggeun Lee of Siheung-si (KR)]][[Category:Junggeun Lee of Siheung-si (KR)]]

[[:Category:Youngjun Cheon of Suwon-si (KR)|Youngjun Cheon of Suwon-si (KR)]][[Category:Youngjun Cheon of Suwon-si (KR)]]

==THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18161331 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

==Simplified Explanation==

The abstract describes a three-dimensional semiconductor memory device that includes multiple stack structures and vertical channel holes. A buffer pattern is placed in one of the vertical channel holes to improve the device's performance.

* The device includes a first stack structure on a substrate, a second stack structure on top of the first stack structure, and vertical channel holes that penetrate both stack structures.
* The first vertical channel hole partially exposes the substrate and the bottom surface of the second stack structure.
* The second vertical channel hole penetrates the second stack structure and exposes the first vertical channel hole.
* The bottom diameter of the second vertical channel hole is smaller than the top diameter of the first vertical channel hole.
* A buffer pattern is placed in the first vertical channel hole, adjacent to the bottom surface of the second stack structure.

Potential applications of this technology:

* Memory devices: This three-dimensional semiconductor memory device can be used in various memory applications, such as solid-state drives (SSDs) and random-access memory (RAM).
* Data storage: The device's stacked structure allows for increased storage capacity, making it suitable for applications that require large amounts of data storage, such as cloud computing and data centers.

Problems solved by this technology:

* Performance improvement: The buffer pattern placed in the vertical channel hole helps optimize the device's performance by reducing interference and improving signal transmission.
* Space efficiency: The three-dimensional structure of the device allows for more efficient use of space, enabling higher storage capacity in a smaller footprint.

Benefits of this technology:

* Increased storage capacity: The stacked structure and vertical channel holes allow for more memory cells to be packed into a smaller area, resulting in higher storage capacity.
* Improved performance: The buffer pattern helps enhance the device's performance by minimizing interference and improving signal transmission.
* Space-saving design: The three-dimensional structure of the device enables more efficient use of space, making it suitable for applications where space is limited.


==Original Abstract Submitted==

A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.



[[Category:H10B43/27]]
[[Category:H10B41/27]]
[[Category:H10B41/35]]
[[Category:H10B43/35]]