View source for 18158605. SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Joon Sung Kim of Seoul (KR)|Joon Sung Kim of Seoul (KR)]][[Category:Joon Sung Kim of Seoul (KR)]]

[[:Category:Byoung Il Lee of Hwaseong-si (KR)|Byoung Il Lee of Hwaseong-si (KR)]][[Category:Byoung Il Lee of Hwaseong-si (KR)]]

[[:Category:Seong-Hun Jeong of Hwaseong-si (KR)|Seong-Hun Jeong of Hwaseong-si (KR)]][[Category:Seong-Hun Jeong of Hwaseong-si (KR)]]

[[:Category:Jun Eon Jin of Suwon-si (KR)|Jun Eon Jin of Suwon-si (KR)]][[Category:Jun Eon Jin of Suwon-si (KR)]]

==SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18158605 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor memory device and a method for improving its reliability. Here are the key points:

* The semiconductor memory device includes a mold structure with gate electrodes and mold insulating films on a substrate.
* A channel structure penetrates the mold structure and crosses each level of the gate electrodes.
* The mold structure also contains first insulating patterns made of a different material than the mold insulating films.
* A first through via is present in the first insulating patterns, penetrating the substrate and the mold structure.
* The gate electrodes consist of a first word line and a second word line on top of the first word line.
* The distance between the first word line and the first through via is different from the distance between the second word line and the first through via.

Potential applications of this technology:

* Semiconductor memory devices used in various electronic devices such as computers, smartphones, and tablets.
* Memory modules used in data centers and servers.

Problems solved by this technology:

* Improved reliability of semiconductor memory devices.
* Reduction of potential failures and errors in memory operations.

Benefits of this technology:

* Enhanced performance and durability of semiconductor memory devices.
* Increased data storage capacity and faster data access.
* Improved overall efficiency and reliability of electronic devices.


==Original Abstract Submitted==

A semiconductor memory device with improved reliability and a related method are provided. The semiconductor memory device includes a mold structure including a plurality of gate electrodes and a plurality of mold insulating films on a first substrate, a channel structure penetrating the mold structure and crossing a respective level of each of the gate electrodes, a plurality of first insulating patterns in the mold structure, the first insulating patterns including a material different from that of the mold insulating films, and a first through via in the first insulating patterns, the first through via penetrating the first substrate and the mold structure. The gate electrodes include a first word line and a second word line on the first word line. A first distance from the first word line to the first through via is different from a second distance from the second word line to the first through via.



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