View source for 18156707. STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Hiroki Noguchi of Hsinchu City (TW)|Hiroki Noguchi of Hsinchu City (TW)]][[Category:Hiroki Noguchi of Hsinchu City (TW)]]

[[:Category:Ku-Feng Lin of New Taipei City (TW)|Ku-Feng Lin of New Taipei City (TW)]][[Category:Ku-Feng Lin of New Taipei City (TW)]]

==STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18156707 titled 'STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE

==Simplified Explanation==

The patent application describes a memory device that includes multiple sense amplifiers and at least one reference cell. The sense amplifiers have two terminals and are connected to a memory cell block. The second terminals of the sense amplifiers are connected together to transmit a read current. The reference cell, on the other hand, transmits the read current to a ground terminal. The resistance value of the reference cell decreases as the number of sense amplifiers increases.

* The memory device has multiple sense amplifiers and at least one reference cell.
* The sense amplifiers are connected to a memory cell block.
* The second terminals of the sense amplifiers are connected together to transmit a read current.
* The reference cell transmits the read current to a ground terminal.
* The resistance value of the reference cell decreases as the number of sense amplifiers increases.

== Potential Applications ==
* Memory devices in electronic devices such as computers, smartphones, and tablets.
* Data storage systems in cloud computing and data centers.
* Embedded memory in various consumer electronics.

== Problems Solved ==
* Improved performance and reliability of memory devices.
* Enhanced read current transmission efficiency.
* More accurate and reliable data storage and retrieval.

== Benefits ==
* Increased speed and efficiency in reading data from memory cells.
* Improved reliability and accuracy of memory operations.
* Cost-effective implementation of memory devices.
* Enhanced overall performance of electronic devices.


==Original Abstract Submitted==

A memory device is provided. The memory device includes several sense amplifiers and at least one reference cell. Each of the sense amplifiers has a first terminal and a second terminal. The first terminals of the sense amplifiers are coupled to a memory cell block, and the second terminals of the sense amplifiers are coupled together to transmit a read current. The at least one reference cell transmits the read current to a ground terminal. The at least one reference cell has a decreased resistance value when a number N of the sense amplifiers increases.



[[Category:G11C13/00]]