View source for 18153832. Wet Cleaning with Tunable Metal Recess for Via Plugs simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=Wet Cleaning with Tunable Metal Recess for Via Plugs=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Yu Shih Wang of Tainan City (TW)|Yu Shih Wang of Tainan City (TW)]][[Category:Yu Shih Wang of Tainan City (TW)]]

[[:Category:Shian Wei Mao of Taipei City (TW)|Shian Wei Mao of Taipei City (TW)]][[Category:Shian Wei Mao of Taipei City (TW)]]

[[:Category:Ming-Hsi Yeh of Hsinchu (TW)|Ming-Hsi Yeh of Hsinchu (TW)]][[Category:Ming-Hsi Yeh of Hsinchu (TW)]]

[[:Category:Kuo-Bin Huang of Hsinchu County (TW)|Kuo-Bin Huang of Hsinchu County (TW)]][[Category:Kuo-Bin Huang of Hsinchu County (TW)]]

==Wet Cleaning with Tunable Metal Recess for Via Plugs - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18153832 titled 'Wet Cleaning with Tunable Metal Recess for Via Plugs

==Simplified Explanation==

The patent application describes a method for protecting a metal plug in a semiconductor structure from corrosion. The method involves etching a via hole to expose the metal plug and applying a metal corrosion protectant to the top surface of the metal plug.

* The method involves providing a semiconductor structure with multiple dielectric layers and a metal plug.
* A via hole is etched into the dielectric layers to expose the metal plug.
* The top surface of the metal plug is etched to create a recess.
* A metal corrosion protectant, which includes a metal corrosion inhibitor, is applied to the top surface of the metal plug.

== Potential Applications ==
* Semiconductor manufacturing
* Electronics industry

== Problems Solved ==
* Corrosion of metal plugs in semiconductor structures
* Protection of metal plugs from environmental factors

== Benefits ==
* Increased lifespan of semiconductor structures
* Improved reliability of electronic devices
* Cost savings in semiconductor manufacturing


==Original Abstract Submitted==

In one exemplary aspect, a method comprises providing a semiconductor structure having a substrate, one or more first dielectric layers over the substrate, a first metal plug in the one or more first dielectric layers, and one or more second dielectric layers over the one or more first dielectric layers and the first metal plug. The method further comprises etching a via hole into the one or more second dielectric layers to expose the first metal plug, etching a top surface of the first metal plug to create a recess thereon, and applying a metal corrosion protectant comprising a metal corrosion inhibitor to the top surface of the first metal plug.



[[Category:H01L21/768]]
[[Category:H01L23/522]]