View source for 18153335. SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

=SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]

==Inventor(s)==

[[:Category:SHIH-JUNG Tu of TAINAN CITY (TW)|SHIH-JUNG Tu of TAINAN CITY (TW)]][[Category:SHIH-JUNG Tu of TAINAN CITY (TW)]]

[[:Category:PO-WEI Liu of TAINAN CITY (TW)|PO-WEI Liu of TAINAN CITY (TW)]][[Category:PO-WEI Liu of TAINAN CITY (TW)]]

[[:Category:TSUNG-YU Yang of TAINAN CITY (TW)|TSUNG-YU Yang of TAINAN CITY (TW)]][[Category:TSUNG-YU Yang of TAINAN CITY (TW)]]

[[:Category:YUN-CHI Wu of TAINAN CITY (TW)|YUN-CHI Wu of TAINAN CITY (TW)]][[Category:YUN-CHI Wu of TAINAN CITY (TW)]]

[[:Category:CHIEN HUNG Liu of HSINCHU COUNTY (TW)|CHIEN HUNG Liu of HSINCHU COUNTY (TW)]][[Category:CHIEN HUNG Liu of HSINCHU COUNTY (TW)]]

==SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18153335 titled 'SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF

==Simplified Explanation==

The semiconductor structure described in the abstract includes various components such as shallow trench isolations, deep trench isolation structure, dielectric layers, and through substrate via structure. Here is a simplified explanation of the patent application:

* Shallow trench isolations are placed on the substrate's second surface.
* Deep trench isolation structure is connected to the first shallow trench isolation.
* Multiple dielectric layers are stacked on top of each other, with the third dielectric layer having a horizontal and vertical portion.
* Through substrate via structure penetrates the substrate from the first surface to the second surface and the second shallow trench isolation.

== Potential Applications ==
The technology described in this patent application could be applied in the semiconductor industry for the manufacturing of advanced semiconductor devices with improved isolation and performance.

== Problems Solved ==
This technology helps in enhancing the isolation capabilities of semiconductor structures, reducing crosstalk, and improving overall device reliability and performance.

== Benefits ==
The benefits of this technology include increased device performance, improved signal integrity, reduced power consumption, and enhanced reliability of semiconductor devices.

== Potential Commercial Applications ==
* "Enhanced Isolation Semiconductor Structures for Advanced Devices"

== Possible Prior Art ==
There may be prior art related to semiconductor structures with shallow and deep trench isolations, dielectric layers, and through substrate via structures. However, specific examples are not provided in this context.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor isolation techniques in terms of performance and reliability? ===
This article does not provide a direct comparison with existing semiconductor isolation techniques, leaving a gap in understanding the competitive advantages of this technology.

=== What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes? ===
The article does not address the potential challenges or limitations that may arise when implementing this technology in mass production, leaving room for further exploration and analysis.


==Original Abstract Submitted==

A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.



[[Category:H01L29/06]]
[[Category:H01L21/762]]
[[Category:H01L23/522]]