View source for 18151991. SHARED BIT LINES FOR MEMORY CELLS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=SHARED BIT LINES FOR MEMORY CELLS=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Ping-Wei Wang of Hsin-Chu (TW)|Ping-Wei Wang of Hsin-Chu (TW)]][[Category:Ping-Wei Wang of Hsin-Chu (TW)]]

[[:Category:Chih-Chuan Yang of Hsinchu (TW)|Chih-Chuan Yang of Hsinchu (TW)]][[Category:Chih-Chuan Yang of Hsinchu (TW)]]

[[:Category:Lien Jung Hung of Taipei (TW)|Lien Jung Hung of Taipei (TW)]][[Category:Lien Jung Hung of Taipei (TW)]]

[[:Category:Feng-Ming Chang of Hsinchu County (TW)|Feng-Ming Chang of Hsinchu County (TW)]][[Category:Feng-Ming Chang of Hsinchu County (TW)]]

[[:Category:Kuo-Hsiu Hsu of Taoyuan County (TW)|Kuo-Hsiu Hsu of Taoyuan County (TW)]][[Category:Kuo-Hsiu Hsu of Taoyuan County (TW)]]

[[:Category:Kian-Long Lim of Hsinchu City (TW)|Kian-Long Lim of Hsinchu City (TW)]][[Category:Kian-Long Lim of Hsinchu City (TW)]]

[[:Category:Ruey-Wen Chang of Hsinchu (TW)|Ruey-Wen Chang of Hsinchu (TW)]][[Category:Ruey-Wen Chang of Hsinchu (TW)]]

==SHARED BIT LINES FOR MEMORY CELLS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18151991 titled 'SHARED BIT LINES FOR MEMORY CELLS

==Simplified Explanation==

The patent application describes methods and devices for memory cells in which a first bit line is connected to a first column of memory cells, and a second bit line is connected to the same first column of cells. The first bit line is also shared with a second column of memory cells adjacent to the first column, while the second bit line is shared with a third column of cells adjacent to the first column but opposite to the second column.

* The patent application introduces a new design for memory cells that allows for sharing of bit lines between adjacent columns of cells.
* The first bit line is connected to both the first and second columns of memory cells, while the second bit line is connected to the first and third columns of cells.
* This design enables more efficient use of bit lines and reduces the number of connections required.
* The shared bit lines allow for faster and more streamlined data transfer between memory cells.
* The innovation can potentially lead to higher memory density and improved performance in memory devices.

== Potential Applications ==
This technology has potential applications in various memory devices, including:
* Computer RAM (Random Access Memory)
* Solid-state drives (SSDs)
* Flash memory
* Cache memory in processors

== Problems Solved ==
The patent application addresses the following problems:
* Inefficient use of bit lines in memory cells
* High number of connections required for bit lines
* Slow data transfer between memory cells
* Limited memory density and performance in existing memory devices

== Benefits ==
The benefits of this technology include:
* Improved efficiency in memory cell design
* Reduced number of connections required
* Faster data transfer between memory cells
* Higher memory density and improved performance in memory devices


==Original Abstract Submitted==

Methods and devices including a plurality of memory cells and a first bit line connected to a first column of memory cells of the plurality of memory cells, and a second bit line connected to the first column of cells. The first bit line is shared with a second column of memory cells adjacent to the first column of memory cells. The second bit line is shared with a third column of cells adjacent to the first column of cells opposite the second column of cells.



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