View source for 18151481. TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Shen-Yang Lee of Miaoli County (TW)|Shen-Yang Lee of Miaoli County (TW)]][[Category:Shen-Yang Lee of Miaoli County (TW)]]

[[:Category:Hsiang-Pi Chang of New Taipei City (TW)|Hsiang-Pi Chang of New Taipei City (TW)]][[Category:Hsiang-Pi Chang of New Taipei City (TW)]]

[[:Category:Huang-Lin Chao of Hillsboro OR (US)|Huang-Lin Chao of Hillsboro OR (US)]][[Category:Huang-Lin Chao of Hillsboro OR (US)]]

==TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18151481 titled 'TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF

==Simplified Explanation==

The method disclosed in the patent application involves tuning the threshold voltage of a transistor by forming various layers and performing specific processes to adjust the properties of the transistor.

* Formation of channel layer over a substrate
* Formation of interfacial layer surrounding the channel layer
* Formation of gate dielectric layer surrounding the interfacial layer
* Formation of dipole layer wrapping around the gate dielectric layer through a cyclic deposition etch process, containing dipole metal elements with uniform thickness
* Performing a thermal drive-in process to drive the dipole metal elements into the gate dielectric layer, forming an interfacial dipole surface
* Removal of the dipole layer

== Potential Applications ==
This technology can be applied in the semiconductor industry for optimizing the performance of transistors in various electronic devices.

== Problems Solved ==
This method helps in fine-tuning the threshold voltage of transistors, which is crucial for controlling the operation and efficiency of electronic devices.

== Benefits ==
- Improved control over transistor performance
- Enhanced efficiency of electronic devices
- Potential for increased battery life in portable devices

== Potential Commercial Applications ==
- Semiconductor manufacturing companies
- Electronics manufacturers
- Research institutions focusing on semiconductor technology

== Possible Prior Art ==
One possible prior art could be the use of different materials or processes to adjust the threshold voltage of transistors in semiconductor devices.

=== Unanswered Questions ===

=== How does this method compare to existing techniques for tuning transistor threshold voltage? ===
This article does not provide a direct comparison with existing techniques, leaving room for further analysis and evaluation of the effectiveness of this method in comparison to traditional approaches.

=== What are the long-term effects of driving the dipole metal elements into the gate dielectric layer on the overall performance and reliability of the transistor? ===
The article does not delve into the long-term implications of this process on the transistor's performance and reliability, warranting further research and experimentation to assess any potential consequences.


==Original Abstract Submitted==

A method for tuning a threshold voltage of a transistor is disclosed. A channel layer is formed over a substrate. An interfacial layer is formed over and surrounds the channel layer. A gate dielectric layer is formed over and surrounds the interfacial layer. A dipole layer is formed over and wraps around the gate dielectric layer by performing a cyclic deposition etch process, and the dipole layer includes dipole metal elements and has a substantially uniform thickness. A thermal drive-in process is performed to drive the dipole metal elements in the dipole layer into the gate dielectric layer to form an interfacial dipole surface, and then the dipole layer is removed.



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