View source for 18120704. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Takuya Yasutake of Kanazawa Ishikawa (JP)|Takuya Yasutake of Kanazawa Ishikawa (JP)]][[Category:Takuya Yasutake of Kanazawa Ishikawa (JP)]]

[[:Category:Hiroaki Katou of Nonoichi Ishikawa (JP)|Hiroaki Katou of Nonoichi Ishikawa (JP)]][[Category:Hiroaki Katou of Nonoichi Ishikawa (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18120704 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a drain electrode, a source electrode, a semiconductor region, a gate electrode, a first insulation film, and a second insulation film with a specific dielectric constant higher than the first insulation film.

* The drain electrode, source electrode, and semiconductor region are key components of the semiconductor device.
* The gate electrode is positioned in the semiconductor region through the first insulation film.
* The second insulation film, with a higher dielectric constant, is located between the gate electrode and the source electrode.

== Potential Applications ==
The semiconductor device could be used in various electronic applications such as integrated circuits, power amplifiers, and sensors.

== Problems Solved ==
This technology helps in improving the performance and efficiency of semiconductor devices by utilizing insulation films with specific dielectric constants.

== Benefits ==
The use of the second insulation film with a higher dielectric constant can enhance the overall functionality and reliability of the semiconductor device.

== Potential Commercial Applications ==
"Enhancing Semiconductor Devices with High Dielectric Constant Insulation Films"

== Possible Prior Art ==
There may be prior art related to the use of different insulation films in semiconductor devices to improve performance and efficiency.

== Unanswered Questions ==

=== How does the specific dielectric constant of the second insulation film impact the overall performance of the semiconductor device? ===
The specific dielectric constant of the second insulation film plays a crucial role in determining the capacitance and speed of the device.

=== Are there any limitations or drawbacks associated with using insulation films with higher dielectric constants in semiconductor devices? ===
While higher dielectric constants can offer benefits, they may also introduce challenges such as increased power consumption or manufacturing complexities.


==Original Abstract Submitted==

A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.



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