View source for 18109338. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Gyuchae Lee of Suwon-si, (KR)|Gyuchae Lee of Suwon-si, (KR)]][[Category:Gyuchae Lee of Suwon-si, (KR)]]

[[:Category:Kyudong Lee of Suwon-si, (KR)|Kyudong Lee of Suwon-si, (KR)]][[Category:Kyudong Lee of Suwon-si, (KR)]]

==MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18109338 titled 'MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME

==Simplified Explanation==

The abstract describes a memory module that includes multiple semiconductor memory devices mounted on a circuit board. A control device is also mounted on the circuit board and is responsible for receiving and transmitting command signals, address signals, and clock signals to the semiconductor memory devices. The memory devices are divided into two groups, with one group located between the control device and one edge of the circuit board, and the other group located between the control device and the opposite edge of the circuit board. The control device transmits the address signals to each group of memory devices through separate transmission lines that are symmetrically positioned with respect to an axis intersecting the control device.

* The memory module includes multiple semiconductor memory devices mounted on a circuit board.
* A control device is mounted on the circuit board and receives command signals, address signals, and clock signals.
* The memory devices are divided into two groups, with one group located between the control device and one edge of the circuit board, and the other group located between the control device and the opposite edge of the circuit board.
* The control device transmits address signals to each group of memory devices through separate transmission lines.
* The transmission lines are physically symmetric with respect to an axis intersecting the control device.

==Potential Applications==
* This memory module design can be used in various electronic devices that require high-speed and efficient memory operations, such as computers, smartphones, and gaming consoles.
* It can be implemented in data centers and server farms to enhance the performance and reliability of memory systems.

==Problems Solved==
* The memory module design solves the problem of signal interference and degradation by using separate transmission lines for each group of memory devices.
* It ensures equal and efficient distribution of address signals to all memory devices, improving overall memory performance.

==Benefits==
* The symmetric positioning of transmission lines helps maintain signal integrity and reduces the risk of data corruption or loss.
* The memory module design allows for faster and more reliable memory operations, leading to improved system performance.
* It provides flexibility in memory module layout and can accommodate different memory configurations.


==Original Abstract Submitted==

A memory module is provided including a plurality of semiconductor memory devices mounted on a circuit board. A control device is mounted on the circuit board and configured to receive a command signal, an address signal, and a clock signal and to provide the command signal, the address signal, and the clock signal to the plurality of semiconductor memory devices. A first group of the semiconductor memory devices is disposed between the control device and a first edge portion of the circuit board, and a second group of the semiconductor memory devices is disposed between the control device and a second edge portion of the circuit board. The control device is configured to transmit the address signal to the first group of the semiconductor memory devices and the second group of the semiconductor memory devices through a first transmission line and a second transmission line, respectively. The first transmission line and the second transmission line are physically symmetric with respect to an axis intersecting the control device.



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