View source for 18062245. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Hagyoul Bae of Hanam-si (KR)|Hagyoul Bae of Hanam-si (KR)]][[Category:Hagyoul Bae of Hanam-si (KR)]]

[[:Category:Seungyeul Yang of Suwon-si (KR)|Seungyeul Yang of Suwon-si (KR)]][[Category:Seungyeul Yang of Suwon-si (KR)]]

[[:Category:Minhyun Lee of Suwon-si (KR)|Minhyun Lee of Suwon-si (KR)]][[Category:Minhyun Lee of Suwon-si (KR)]]

[[:Category:Jinseong Heo of Suwon-si (KR)|Jinseong Heo of Suwon-si (KR)]][[Category:Jinseong Heo of Suwon-si (KR)]]

[[:Category:Taehwan Moon of Suwon-si (KR)|Taehwan Moon of Suwon-si (KR)]][[Category:Taehwan Moon of Suwon-si (KR)]]

==VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18062245 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

==Simplified Explanation==

The abstract describes a vertical non-volatile memory device that includes multiple insulating and conductive layers stacked on a substrate. A channel layer is present on the substrate, extending in a perpendicular direction and covering the lateral surfaces of the insulating and conductive layers. A ferroelectric layer is positioned between the channel layer and the lateral surfaces of the conductive layers.

* The device consists of stacked insulating and conductive layers on a substrate.
* A channel layer is present on the substrate, extending in a perpendicular direction.
* The channel layer covers the lateral surfaces of the insulating and conductive layers.
* A ferroelectric layer is positioned between the channel layer and the lateral surfaces of the conductive layers.

== Potential Applications ==
* Non-volatile memory devices for various electronic applications.
* High-density storage solutions for computers, smartphones, and other devices.
* Memory modules for data centers and cloud computing.

== Problems Solved ==
* Provides a compact and efficient design for non-volatile memory devices.
* Enables vertical stacking of multiple layers, increasing storage capacity.
* Offers a reliable and stable memory solution with the use of a ferroelectric layer.

== Benefits ==
* Increased storage capacity due to vertical stacking of layers.
* Improved performance and reliability of non-volatile memory devices.
* Compact design allows for integration into various electronic devices.


==Original Abstract Submitted==

A vertical non-volatile memory device may include a plurality of insulating layers and a plurality of conductive layers alternately stacked on a surface of a substrate in a direction perpendicular to the surface of the substrate; a channel layer on the substrate, where the channel layer extends in the direction perpendicular to the surface of the substrate and the channel layer may be on lateral surfaces of the plurality of insulating layers and lateral surfaces of the plurality of conductive layers; and a ferroelectric layer between the channel layer and the lateral surfaces of the plurality of conductive layers.



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