View source for 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)

=OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION=


==Organization Name==

[[:Category:QUALCOMM Incorporated|QUALCOMM Incorporated]]


[[Category:QUALCOMM Incorporated]]

==Inventor(s)==

[[:Category:Xia Li of San Diego CA (US)|Xia Li of San Diego CA (US)]][[Category:Xia Li of San Diego CA (US)]]

[[:Category:Bin Yang of San Diego CA (US)|Bin Yang of San Diego CA (US)]][[Category:Bin Yang of San Diego CA (US)]]

[[:Category:Haining Yang of San Diego CA (US)|Haining Yang of San Diego CA (US)]][[Category:Haining Yang of San Diego CA (US)]]

==OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18047954 titled 'OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

==Simplified Explanation==

The abstract describes a vertical transport field effect transistor (VTFET) with multiple FET structures on a substrate, including n-type and p-type FET structures oriented in different directions. Each structure has a FIN with a defined height, allowing for charge carriers to be transported along the FIN height.

* The VTFET comprises multiple FET structures on a substrate.
* The FET structures include n-type and p-type FET structures oriented in different directions.
* Each structure has a FIN with a defined height for transporting charge carriers along the FIN height.

== Potential Applications ==
The technology could be applied in:
* High-speed electronic devices
* Power amplifiers
* Signal processing circuits

== Problems Solved ==
* Improved charge carrier transport efficiency
* Enhanced performance of vertical transport field effect transistors

== Benefits ==
* Increased speed and efficiency in electronic devices
* Better power management capabilities
* Enhanced signal processing performance

== Potential Commercial Applications ==
Optimizing Vertical Transport Field Effect Transistors for Improved Electronic Devices

== Possible Prior Art ==
One possible prior art could be the use of traditional field effect transistors with horizontal charge carrier transport mechanisms.

== Unanswered Questions ==

=== How does the FIN height impact the overall performance of the VTFET? ===
The abstract mentions the FIN height as a key parameter, but it does not elaborate on its specific effects on the transistor's performance.

=== Are there any limitations to the charge carrier transport along the FIN height? ===
While the abstract highlights the ability of the FIN to transport charge carriers, it does not address any potential limitations or challenges in this process.


==Original Abstract Submitted==

A vertical transport field effect transistor (VTFET) comprising: a plurality of FET structures on a substrate; the plurality of FET structures comprising: a first n-type FET structure oriented in a first plane direction relative to the substrate; and a first p-type FET structure oriented in a second plane direction relative to the substrate; wherein the first n-type FET structure and the first p-type FET structure each comprises a FIN having a FIN height, H, wherein H defines the FIN height orthogonal to a surface of the substrate, each FIN being configured to transport charge carriers orthogonal to the surface of the substrate along the FIN height.



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