View source for 17983856. SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Seunggeol Nam of Suwon-si (KR)|Seunggeol Nam of Suwon-si (KR)]][[Category:Seunggeol Nam of Suwon-si (KR)]]

[[:Category:Hagyoul Bae of Suwon-si (KR)|Hagyoul Bae of Suwon-si (KR)]][[Category:Hagyoul Bae of Suwon-si (KR)]]

[[:Category:Jinseong Heo of Seoul (KR)|Jinseong Heo of Seoul (KR)]][[Category:Jinseong Heo of Seoul (KR)]]

==SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17983856 titled 'SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS

==Simplified Explanation==

The patent application describes a semiconductor element that includes various layers and electrodes to control the flow of current. 

* The semiconductor element consists of a channel layer made of a semiconductor material.
* There are two layers, p-type and n-type, on either side of the channel layer, creating a sandwich structure.
* A paraelectric layer is present on one area of the channel layer, while a ferroelectric layer is present on a different area.
* The ferroelectric layer has a polarization state that can be controlled by applying a voltage from an external source.
* Two gate electrodes, one on the paraelectric layer and the other on the ferroelectric layer, are present.
* An insulating layer separates the two gate electrodes, ensuring electrical separation.

Potential applications of this technology:

* This semiconductor element can be used in various electronic devices, such as transistors and integrated circuits.
* It can enable the development of more efficient and compact electronic components.

Problems solved by this technology:

* The semiconductor element provides improved control over the flow of current, allowing for better performance and functionality in electronic devices.
* The use of a ferroelectric layer with a polarization state provides additional capabilities for manipulating the behavior of the semiconductor element.

Benefits of this technology:

* The semiconductor element offers enhanced functionality and performance in electronic devices.
* It allows for more precise control over the flow of current, leading to improved efficiency.
* The use of a ferroelectric layer adds a new dimension of control and manipulation to the semiconductor element.


==Original Abstract Submitted==

According to various example embodiments, a semiconductor element includes: a channel layer including a semiconductor material; a p-type semiconductor layer and an n-type semiconductor layer apart from each other with the channel layer therebetween, a paraelectric layer on a first area of the channel layer, a ferroelectric layer on a second area different from the first area of the channel area, and having a polarization state due to a voltage applied from an external source, a first gate electrode on the paraelectric layer, a second gate electrode on the ferroelectric layer, and an insulating layer between the first gate electrode and the second gate electrode, and electrically separating the first gate electrode and the second gate electrode from each other.



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