View source for 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)

=3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:H. Jim Fulford of Albany NY (US)|H. Jim Fulford of Albany NY (US)]][[Category:H. Jim Fulford of Albany NY (US)]]

[[:Category:Mark I. Gardner of Albany NY (US)|Mark I. Gardner of Albany NY (US)]][[Category:Mark I. Gardner of Albany NY (US)]]

==3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17962233 titled '3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS

==Simplified Explanation==

A transistor structure with horizontal nanosheets forming channels and gate structures surrounding them.

* First transistor with first and second nanosheets forming channels, and a first gate structure surrounding them.
* Second transistor with third and fourth nanosheets forming channels, and a second gate structure surrounding them.
* First nanosheet above the third nanosheet, the third above the second, and the second above the fourth nanosheet.

== Potential Applications ==
The technology can be applied in:
* Advanced electronic devices
* High-performance computing systems
* Nanotechnology research

== Problems Solved ==
The innovation addresses:
* Enhanced transistor performance
* Improved efficiency in electronic devices
* Increased speed and reliability in computing systems

== Benefits ==
The benefits of this technology include:
* Higher transistor density
* Lower power consumption
* Faster data processing speeds

== Potential Commercial Applications ==
The technology can be utilized in:
* Semiconductor industry
* Consumer electronics manufacturing
* Telecommunications sector

== Possible Prior Art ==
No prior art is known at this time.

== Unanswered Questions ==

=== How does this transistor structure compare to traditional transistor designs? ===
The article does not provide a direct comparison between this transistor structure and traditional transistor designs. 

=== What are the specific dimensions and materials used in the construction of these nanosheets? ===
The article does not detail the specific dimensions and materials used in the construction of the nanosheets.


==Original Abstract Submitted==

A transistor structure may include a first transistor beside a second transistor. The first transistor can include a first nanosheet oriented horizontally and forming a first channel, a second nanosheet oriented horizontally and forming a second channel, and a first gate structure disposed between and at least partly surrounding the first channel and the second channel. The second transistor can include a third nanosheet oriented horizontally and forming a third channel, a fourth nanosheet oriented horizontally and forming a fourth channel, and a second gate structure disposed between and at least partly surrounding the third channel and the fourth channel. The first nanosheet can be disposed above the third nanosheet, the third nanosheet is disposed above the second nanosheet, and the second nanosheet is disposed above the fourth nanosheet.



[[Category:H01L27/092]]
[[Category:H01L21/02]]
[[Category:H01L21/8256]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
[[Category:H01L29/775]]