View source for 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)

=HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Mark I. Gardner of Albany NY (US)|Mark I. Gardner of Albany NY (US)]][[Category:Mark I. Gardner of Albany NY (US)]]

[[:Category:H. Jim Fulford of Albany NY (US)|H. Jim Fulford of Albany NY (US)]][[Category:H. Jim Fulford of Albany NY (US)]]

==HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17962222 titled 'HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS

==Simplified Explanation==

The patent application describes a method for fabricating a structure comprising one or more transistors with nanosheets surrounded by a layer of shell material to form channels, with a gate structure surrounding each channel.

* The transistor includes nanosheets formed from a nanosheet material.
* A layer of shell material surrounds the nanosheets to create channels in the transistor.
* The gate structure of the transistor surrounds each channel and includes a gate dielectric between the shell material and a gate metal for each nanosheet.
* The shell material has a higher charge carrier mobility than the nanosheet material.

== Potential Applications ==
This technology could be applied in the development of high-performance electronic devices, such as advanced transistors for use in integrated circuits.

== Problems Solved ==
This technology addresses the challenge of improving the performance of transistors by enhancing charge carrier mobility, which can lead to faster and more efficient electronic devices.

== Benefits ==
The use of nanosheets surrounded by shell material in transistors can result in increased charge carrier mobility, leading to improved device performance and energy efficiency.

== Potential Commercial Applications ==
The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with enhanced performance.

== Possible Prior Art ==
One possible prior art could be the use of nanowires in transistors to improve device performance. However, the specific use of nanosheets surrounded by shell material for enhanced charge carrier mobility may be a novel aspect of this technology.

== Unanswered Questions ==
=== How does the fabrication process of the nanosheets and shell material impact the overall performance of the transistors? ===
The article does not provide detailed information on the specific fabrication techniques used for creating the nanosheets and surrounding shell material, leaving room for further exploration into the manufacturing process and its effects on transistor performance.

=== What are the potential limitations or drawbacks of using shell material with higher charge carrier mobility in transistors? ===
The article does not discuss any potential downsides or challenges associated with incorporating shell material with higher charge carrier mobility in transistors, leaving room for investigation into any limitations of this approach.


==Original Abstract Submitted==

A method for fabricating and a structure comprising one or more transistors where a transistor includes one or more nanosheets formed based on one or more layers of a nanosheet material. A layer of shell material can at least partly surround the one or more nanosheets to form one or more channels of the transistor. A gate structure of the transistor can at least partly surround each of the one or more channels. The gate structure can include a gate dielectric disposed between the layer of the shell material and a gate metal of the gate structure for each of the nanosheets, where the shell material can include a charge carrier mobility that is greater than a charge carrier mobility of the nanosheet material.



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