View source for 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)

=INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:HUIMEI Zhou of ALBANY NY (US)|HUIMEI Zhou of ALBANY NY (US)]][[Category:HUIMEI Zhou of ALBANY NY (US)]]

[[:Category:MIAOMIAO Wang of ALBANY NY (US)|MIAOMIAO Wang of ALBANY NY (US)]][[Category:MIAOMIAO Wang of ALBANY NY (US)]]

[[:Category:Julien Frougier of ALBANY NY (US)|Julien Frougier of ALBANY NY (US)]][[Category:Julien Frougier of ALBANY NY (US)]]

[[:Category:Andrew M. Greene of Slingerlands NY (US)|Andrew M. Greene of Slingerlands NY (US)]][[Category:Andrew M. Greene of Slingerlands NY (US)]]

[[:Category:Barry Paul Linder of Hastings-on-Hudson NY (US)|Barry Paul Linder of Hastings-on-Hudson NY (US)]][[Category:Barry Paul Linder of Hastings-on-Hudson NY (US)]]

[[:Category:Kai Zhao of ALBANY NY (US)|Kai Zhao of ALBANY NY (US)]][[Category:Kai Zhao of ALBANY NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Tian Shen of San Jose CA (US)|Tian Shen of San Jose CA (US)]][[Category:Tian Shen of San Jose CA (US)]]

[[:Category:Veeraraghavan S. Basker of Fremont CA (US)|Veeraraghavan S. Basker of Fremont CA (US)]][[Category:Veeraraghavan S. Basker of Fremont CA (US)]]

==INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17960116 titled 'INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

==Simplified Explanation==

The integrated circuit apparatus described in the patent application includes a well contact with first and second source/drain structures, a metal vertical portion, inner spacers, bottom dielectric isolation, and a well portion embedded into the substrate. The well portion is doped differently than the substrate.

* The well contact in the integrated circuit apparatus includes first and second source/drain structures.
* A metal vertical portion contacts the substrate between the first and second source/drain structures.
* Inner spacers electrically insulate the vertical portion from the adjacent source/drain structures.
* Bottom dielectric isolation electrically insulates the source/drain structures from the substrate.
* The well portion is embedded into the substrate and is doped differently than the substrate.

== Potential Applications ==
The technology described in this patent application could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance semiconductor devices.

== Problems Solved ==
This technology addresses the need for improved electrical insulation and doping control in integrated circuits, enhancing their overall performance and reliability.

== Benefits ==
The integrated circuit apparatus offers enhanced electrical insulation, precise doping control, and improved performance, contributing to the development of more efficient semiconductor devices.

== Potential Commercial Applications ==
The technology has potential applications in the semiconductor industry for the production of advanced integrated circuits with superior performance and reliability.

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar well contacts with different doping levels in integrated circuits to improve performance and reliability.

=== Unanswered Questions ===

== How does this technology compare to existing methods for electrical insulation in integrated circuits? ==
This article does not provide a direct comparison to existing methods for electrical insulation in integrated circuits. Further research or a comparative analysis would be needed to address this question.

== What specific semiconductor devices could benefit the most from this technology? ==
The article does not specify the specific semiconductor devices that could benefit the most from this technology. Additional research or expert opinion in the field could provide insights into this question.


==Original Abstract Submitted==

An integrated circuit apparatus includes a substrate and a well contact that is disposed on the substrate. The well contact includes first and second source/drain structures that are disposed on the substrate; a metal vertical portion that contacts the substrate immediately between the first and second source/drain structures; inner spacers that electrically insulate the vertical portion from the adjacent source/drain structures; bottom dielectric isolation that electrically insulates the source/drain structures from the substrate; and a well portion that is embedded into the substrate in registry with the vertical portion. The well portion is doped differently than the substrate.



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