View source for 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)

=GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Sukru Yemenicioglu of Portland OR (US)|Sukru Yemenicioglu of Portland OR (US)]][[Category:Sukru Yemenicioglu of Portland OR (US)]]

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Marni Nabors of Portland OR (US)|Marni Nabors of Portland OR (US)]][[Category:Marni Nabors of Portland OR (US)]]

[[:Category:Xinning Wang of Hillsboro OR (US)|Xinning Wang of Hillsboro OR (US)]][[Category:Xinning Wang of Hillsboro OR (US)]]

==GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17957821 titled 'GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING

==Simplified Explanation==

The abstract describes an integrated circuit with two devices, each consisting of a body made of semiconductor material with source and drain regions, and gate structures. A gate cut with dielectric material separates the two gate structures laterally, with different distances between the bodies and the gate cut.

* The integrated circuit includes two devices with semiconductor bodies, source and drain regions, and gate structures.
* A gate cut with dielectric material separates the gate structures laterally.
* The bodies of the devices are laterally separated from the gate cut by different distances.
* The devices may be fin-based or gate-all-around devices.

== Potential Applications ==
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.

== Problems Solved ==
This innovation helps improve the performance and efficiency of integrated circuits by optimizing the lateral separation between devices and gate cuts, reducing interference and enhancing overall functionality.

== Benefits ==
- Enhanced performance and efficiency of integrated circuits
- Reduced interference between devices
- Improved functionality and reliability

== Potential Commercial Applications ==
The technology could be utilized in the semiconductor industry for the production of high-performance integrated circuits, targeting a wide range of electronic devices in the consumer electronics market.

== Possible Prior Art ==
One possible prior art could be the use of gate cuts in integrated circuits to separate different devices laterally, but the specific optimization of lateral distances between bodies and gate cuts may be a novel aspect of this innovation.

== Unanswered Questions ==

=== How does this technology impact power consumption in integrated circuits? ===
The abstract does not provide information on how this innovation may affect the power efficiency of integrated circuits.

=== What are the potential challenges in implementing this technology on a large scale? ===
The abstract does not address the potential obstacles or difficulties that may arise when scaling up the production of integrated circuits using this technology.


==Original Abstract Submitted==

An integrated circuit includes a first device and a laterally adjacent second device. The first device includes a first body including semiconductor material extending from a first source region to a first drain region, and a first gate structure on the first body. The second device includes a second body including semiconductor material extending from a second source region to a second drain region, and a second gate structure on the second body. A gate cut including dielectric material is between and laterally separates the first gate structure and the second gate structure. The first body is separated laterally from the gate cut by a first distance, and the second body is separated laterally from the gate cut by a second distance. In an example, the first and second distances differ by at least 2 nanometers. In an example, the first and second devices are fin-based devices or gate-all-around devices.



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