View source for 17949861. INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH simplified abstract (Intel Corporation)

=INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Ala Alazizi of Portland OR (US)|Ala Alazizi of Portland OR (US)]][[Category:Ala Alazizi of Portland OR (US)]]

[[:Category:Tsuan-Chung Chang of Portland OR (US)|Tsuan-Chung Chang of Portland OR (US)]][[Category:Tsuan-Chung Chang of Portland OR (US)]]

==INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17949861 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH

==Simplified Explanation==

The patent application describes integrated circuit structures with gate cut plugs removed from trench contacts, along with methods of fabricating such structures. Here is a simplified explanation of the innovation:

* Integrated circuit structure with a vertical stack of horizontal nanowires
* Gate electrode positioned over the vertical stack of nanowires
* Conductive trench contact adjacent to the gate electrode
* Dielectric sidewall spacer between the gate electrode and the trench contact
* Gate cut plug extending through the gate electrode and the sidewall spacer
* Gate cut plug conformal with a side of the conductive trench contact

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### Potential Applications of this Technology
* Advanced semiconductor devices
* High-performance integrated circuits

### Problems Solved by this Technology
* Improved electrical connectivity in integrated circuits
* Enhanced performance and reliability of semiconductor devices

### Benefits of this Technology
* Higher efficiency in data processing
* Increased speed and functionality of electronic devices

### Potential Commercial Applications of this Technology
#### Optimizing Semiconductor Manufacturing Processes for Enhanced Performance

### Possible Prior Art
No prior art information is available at this time.

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#### Unanswered Questions

### How does this technology impact the overall cost of manufacturing integrated circuits?
The patent application does not provide information on the cost implications of implementing this technology. Further research or analysis would be needed to determine the cost-effectiveness of this innovation.

### What are the potential environmental impacts of using integrated circuit structures with gate cut plugs removed from trench contacts?
The environmental implications of this technology are not addressed in the patent application. Additional studies or assessments would be necessary to evaluate any environmental effects resulting from the adoption of this innovation.


==Original Abstract Submitted==

Integrated circuit structures having gate cut plugs removed from trench contacts, and methods of fabricating integrated circuit structures having gate cut plugs removed from trench contacts, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer. The gate cut plug extends to and is conformal with a side of the conductive trench contact.



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