View source for 17947675. WIDEBAND VARIABLE IMPEDANCE LOAD FOR HIGH VOLUME MANUFACTURING QUALIFICATION AND ON-SITE DIAGNOSTICS simplified abstract (Applied Materials, Inc.)

=WIDEBAND VARIABLE IMPEDANCE LOAD FOR HIGH VOLUME MANUFACTURING QUALIFICATION AND ON-SITE DIAGNOSTICS=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Yue Guo of Redwood City CA (US)|Yue Guo of Redwood City CA (US)]][[Category:Yue Guo of Redwood City CA (US)]]

[[:Category:Kartik Ramaswamy of San Jose CA (US)|Kartik Ramaswamy of San Jose CA (US)]][[Category:Kartik Ramaswamy of San Jose CA (US)]]

[[:Category:Jie Yu of Santa Clara CA (US)|Jie Yu of Santa Clara CA (US)]][[Category:Jie Yu of Santa Clara CA (US)]]

[[:Category:Yang Yang of San Diego CA (US)|Yang Yang of San Diego CA (US)]][[Category:Yang Yang of San Diego CA (US)]]

==WIDEBAND VARIABLE IMPEDANCE LOAD FOR HIGH VOLUME MANUFACTURING QUALIFICATION AND ON-SITE DIAGNOSTICS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17947675 titled 'WIDEBAND VARIABLE IMPEDANCE LOAD FOR HIGH VOLUME MANUFACTURING QUALIFICATION AND ON-SITE DIAGNOSTICS

==Simplified Explanation==

The abstract describes a wideband variable impedance load for testing and qualifying radio frequency power sources used in semiconductor fabrication processes. The load includes a fixed value resistance coupled with a variable impedance network to generate a wide range of complex impedances at different frequencies.

* The wideband variable impedance load is designed for high volume manufacturing qualification and diagnostic testing of radio frequency power sources, impedance matching networks, and RF sensors used in semiconductor plasma chambers.
* The load consists of a fixed value resistance that can be transformed into various complex impedances at different frequencies using a variable impedance network.
* The system allows for verification of response times and match tuning element position repeatability.
* Automatic testing, verification, and qualification of production and field installed radio frequency power sources for plasma generation can be easily performed.

== Potential Applications ==
The technology can be applied in semiconductor fabrication processes for testing and qualifying radio frequency power sources, impedance matching networks, and RF sensors.

== Problems Solved ==
The wideband variable impedance load solves the problem of accurately testing and qualifying radio frequency power sources used in semiconductor plasma chambers.

== Benefits ==
The system provides a reliable and efficient way to verify response times, match tuning element position repeatability, and automatically test and qualify radio frequency power sources.

== Potential Commercial Applications ==
The technology can be commercialized for semiconductor manufacturing companies to ensure the quality and reliability of their radio frequency power sources.

== Possible Prior Art ==
One possible prior art could be traditional fixed impedance loads used in testing radio frequency power sources, which may not offer the same level of flexibility and wideband capabilities as the described invention.

=== Unanswered Questions ===

== How does the wideband variable impedance load compare to traditional fixed impedance loads in terms of performance and efficiency? ==
The article does not provide a direct comparison between the wideband variable impedance load and traditional fixed impedance loads in terms of performance and efficiency.

== What are the potential cost implications of implementing the wideband variable impedance load in semiconductor fabrication processes? ==
The article does not address the potential cost implications of implementing the wideband variable impedance load in semiconductor fabrication processes.


==Original Abstract Submitted==

A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.



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