View source for 17947524. PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL simplified abstract (International Business Machines Corporation)

=PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Huimei Zhou of Albany NY (US)|Huimei Zhou of Albany NY (US)]][[Category:Huimei Zhou of Albany NY (US)]]

[[:Category:Terence Hook of Jericho Center VT (US)|Terence Hook of Jericho Center VT (US)]][[Category:Terence Hook of Jericho Center VT (US)]]

[[:Category:Junli Wang of Slingerlands NY (US)|Junli Wang of Slingerlands NY (US)]][[Category:Junli Wang of Slingerlands NY (US)]]

[[:Category:Miaomiao Wang of Albany NY (US)|Miaomiao Wang of Albany NY (US)]][[Category:Miaomiao Wang of Albany NY (US)]]

==PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17947524 titled 'PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL

==Simplified Explanation==

The patent application describes an integrated circuit with a protection diode that is connected to a device under test (DUT) using various contacts and layers for gate oxide protection.

* The integrated circuit includes a protection diode with first gates and first source/drain contacts.
* The DUT has second gates and second source/drain contacts, and is connected to the protection diode through gate contacts, CA contacts, or a buried power rail (BPR).
* The connection between the protection diode and the DUT is made using middle-of-line (MOL) layers for gate oxide protection before M1 formation.

== Potential Applications ==
This technology could be applied in the semiconductor industry for the development of integrated circuits with improved protection diodes for enhanced reliability and performance.

== Problems Solved ==
1. Improved electrical connection between the protection diode and the device under test.
2. Enhanced gate oxide protection for the integrated circuit.

== Benefits ==
1. Increased reliability of the integrated circuit.
2. Improved performance of the protection diode.
3. Simplified design and manufacturing process for integrated circuits.

== Potential Commercial Applications ==
Optimizing Gate Oxide Protection in Integrated Circuits for Enhanced Reliability and Performance

== Possible Prior Art ==
Prior art may include patents or publications related to the integration of protection diodes in semiconductor devices, as well as techniques for gate oxide protection in integrated circuits.

== Unanswered Questions ==
=== How does this technology compare to existing methods of connecting protection diodes to devices under test in integrated circuits? ===
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.

=== What are the specific performance improvements that can be expected from implementing this technology in integrated circuits? ===
While the benefits of the technology are mentioned, the article does not delve into the specific performance enhancements that can be achieved by using this innovation.


==Original Abstract Submitted==

An integrated circuit is presented including a protection diode including a plurality of first gates and a plurality of first source/drain (S/D) contacts and a device under test (DUT) including a plurality of second gates and a plurality of second S/D contacts, the DUT being electrically connected to the protection diode by either at least one gate contact or at least on CA contact or at least one buried power rail (BPR). The protection diode is electrically connected to the DUT by middle-of-line (MOL) layers for gate oxide protection before M1 formation.



[[Category:H01L27/02]]