View source for 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)

=HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE=


==Organization Name==

[[:Category:TOKYO ELECTRON LIMITED|TOKYO ELECTRON LIMITED]]


[[Category:TOKYO ELECTRON LIMITED]]

==Inventor(s)==

[[:Category:H. Jim Fulford of Albany NY (US)|H. Jim Fulford of Albany NY (US)]][[Category:H. Jim Fulford of Albany NY (US)]]

[[:Category:Mark I. Gardner of Albany NY (US)|Mark I. Gardner of Albany NY (US)]][[Category:Mark I. Gardner of Albany NY (US)]]

==HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17945888 titled 'HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE

==Simplified Explanation==

The patent application describes a method for manufacturing semiconductor devices with vertically spaced first and second semiconductor channels, each having different materials simultaneously epitaxial-grown. Gate structures are formed around the top surface, bottom surface, and second sidewall of the channels.

* Explanation of the patent/innovation:
  * Plurality of first and second semiconductor channels vertically spaced from each other
  * Different materials simultaneously epitaxial-grown for the channels
  * Gate structures formed around the channels

== Potential Applications ==
The technology described in the patent application could be applied in:
* Semiconductor manufacturing
* Integrated circuits
* Electronic devices

== Problems Solved ==
The technology addresses the following issues:
* Enhancing semiconductor device performance
* Improving integration density
* Enhancing manufacturing efficiency

== Benefits ==
The benefits of this technology include:
* Higher performance semiconductor devices
* Increased integration density
* Improved manufacturing efficiency

== Potential Commercial Applications ==
The technology could have commercial applications in:
* Semiconductor industry
* Electronics manufacturing
* Research and development

== Possible Prior Art ==
One possible prior art for this technology could be:
* Epitaxial growth techniques in semiconductor manufacturing

=== Unanswered Questions ===

=== How does this technology impact energy efficiency in semiconductor devices? ===
This article does not specifically address the impact of the technology on energy efficiency in semiconductor devices. Further research and analysis would be needed to determine the effects on energy consumption.

=== What are the potential challenges in scaling up this manufacturing process for mass production? ===
The article does not discuss the potential challenges in scaling up this manufacturing process for mass production. Factors such as cost, yield rates, and production scalability would need to be considered in implementing this technology on a larger scale.


==Original Abstract Submitted==

Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another, wherein different materials are simultaneously epitaxial-grown for the first semiconductor channels and the second semiconductor channels, can be provided. The plurality of first semiconductor channels each have a first sidewall in contact with a dielectric structure and the plurality of second semiconductor channels each have a first sidewall in contact with the dielectric structure. Gate structures can be formed around at least a top surface, a bottom surface, and a second sidewall of the first and second semiconductor channels.



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