View source for 17945275. STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract (International Business Machines Corporation)

=STRUCTURE HAVING ENHANCED GATE RESISTANCE=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Terence Hook of Jericho Center VT (US)|Terence Hook of Jericho Center VT (US)]][[Category:Terence Hook of Jericho Center VT (US)]]

==STRUCTURE HAVING ENHANCED GATE RESISTANCE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17945275 titled 'STRUCTURE HAVING ENHANCED GATE RESISTANCE

==Simplified Explanation==

The abstract describes a semiconductor structure with enhanced gate resistance achieved by incorporating a shunting material pillar along the sidewall of a gate structure.

* The semiconductor structure includes stacked nanosheet devices.
* The shunting material pillar has a lower resistivity than the gate structure it is adjacent to.
* The shunting material pillar helps enhance the gate resistance of the structure.

== Potential Applications ==
This technology could be applied in the development of advanced semiconductor devices, particularly in the field of nanotechnology.

== Problems Solved ==
This innovation addresses the issue of gate resistance in semiconductor structures, improving their overall performance and efficiency.

== Benefits ==
The enhanced gate resistance provided by the shunting material pillar can lead to increased speed, reliability, and power efficiency in semiconductor devices.

== Potential Commercial Applications ==
This technology could find applications in various industries such as electronics, telecommunications, and computing, where high-performance semiconductor devices are in demand.

== Possible Prior Art ==
One possible prior art could be the use of different materials to enhance gate resistance in semiconductor structures, but the specific approach of incorporating a shunting material pillar along the sidewall of a gate structure may be novel.

=== What are the specific materials used in the shunting material pillar?
The abstract does not specify the exact materials used in the shunting material pillar. Further details on the composition of this pillar would be beneficial for a more comprehensive understanding of the innovation.

=== How does the presence of the shunting material pillar affect the overall size of the semiconductor structure?
The abstract does not mention how the inclusion of the shunting material pillar impacts the size or dimensions of the semiconductor structure. Understanding any potential size implications would be important for practical implementation and integration of this technology.


==Original Abstract Submitted==

Semiconductor structures such as, for example, stacked nanosheet devices, having enhanced gate resistance are provided. The enhanced gate resistance is obtained by providing a shunting material pillar in the structure and along a sidewall (or opposing sidewalls) of at least one gate structure. The shunting material pillar has a resistivity that is lower than a resistivity of the gate structure that it is laterally adjacent to.



[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/775]]
[[Category:H01L29/786]]